Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-12-01T00:00:55.469Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications

Published online by Cambridge University Press:  29 January 2013

B. Kucukgok ,
Q. He ,
A. Carlson ,
A. G. Melton ,
I. T. Ferguson  and
N. Lu
B. Kucukgok
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
Q. He
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
A. Carlson
Affiliation:
Department of Mechanical Engineering and Engineering Science, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
A. G. Melton
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
I. T. Ferguson
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
N. Lu
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A. Department of Engineering Technology, University of North Carolina at Charlotte, 9201 University City Blvd, Charlotte, NC 28223, U.S.A.
Get access

Abstract

Thermoelectric materials with stable mechanical and chemical properties at high temperature are required for power generation applications. For example, gas temperatures up to 1000°C are normally present in the waste stream of industrial processes and this can be used for electricity generation. There are few semiconductor materials that can operate effectively at these high temperatures. One solution may be the use of wide bandgap materials, and in particular GaN-based materials, which may offer a traditional semiconductor solution for high temperatures thermoelectric power generation. In particular, the ability to both grow GaN-based materials and fabricate them into devices is well understood if their thermoelectric properties are favorable. To investigate the possibility of using III-Nitride and its alloys for thermoelectric applications, we synthesized and characterized room temperature thermoelectric properties of metal organic chemical vapor deposition grown GaN and InGaN with different carrier concentrations and indium compositions. The promising value of Seebeck coefficients and power factors of Si-doped GaN and InGaN indicated that these materials are suitable for thermoelectric applications.

Keywords

thermoelectricitynitridethermoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1490: Symposium B – Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration , 2013 , pp. 161 - 166
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Fergus, J.W., Journal of the European Ceramic Society 32, 525–540 (2012).CrossRefGoogle Scholar
Hadjistassou, C., Kyriakides, E., Georgiou, J., Energy Conversion and Management 66, 165–172 (2013)CrossRefGoogle Scholar
Kosuga, A., Plirdpring, T., Higashine, R., Matsuzawa, M., Kurosaki, K., and Yamanaka, S., Applied Physics Letters 100, 042108 (2012).CrossRefGoogle Scholar
Lo, S.H., He, J., Biswas, K., Kanatzidis, M.G., and Dravid, V. P., Advanced Functional Materials, (2012).Google Scholar
Delairel, O., Ma, J., Marty, K., May, A. F., McGuire, M. A., Du, M-H., Singh, D. J., Podlesnyak, A., Ehlers, G., Lumsden, M. D. and Sales, B. C., Nature 10, (2011).Google Scholar
Liu, H., Shi, X., Xu, F., Zhang, L., Zhang, W., Chen, L., Li, Q., Uher, C., Day, T. and Snyder, G. J., Nature 11, (2012).Google Scholar
Snyder, G.J., Toberer, E.S., Nature 7, (2008).Google Scholar
Shakouri, A., Annual Review Materials Research 41, 399–431 (2011).CrossRefGoogle Scholar
Tritt, T.M, Annual Review Material Research, 41, 433–448 (2011).CrossRefGoogle Scholar
Liu, W. and Balandin, A.A., Journal of Applied Physics 97, 073710 (2005).CrossRefGoogle Scholar
Yamaguchi, S., Izaki, R., Kaiwa, N., Yamamoto, A., Applied Physics Letters 86, 252102, (2005).CrossRefGoogle Scholar
Pantha, B.N., Dahal, R., Li, J., Lin, J.Y., Jiang, H.X., Applied Physics Letters 92, 042112 (2008).CrossRefGoogle Scholar
Sztein, A., Ohta, H., Sonoda, J., Ramu, A., Bowers, J. E., DenBaars, S. P., and Nakamura, S., Applied Physics Express 2, 111003 (2009).CrossRefGoogle Scholar
Tong, H., Zhao, H., Handara, V.A., Herbsommer, J.A. and Tansu, N., SPIE 7211, 721103 (2009).Google Scholar
Hurwitz, E. N., Kucukgok, B., Melton, A. G., Liu, Z., Lu, N., Ferguson, I. T., Material Research Society Symposium Proceeding, 1396, (2012).Google Scholar
Sztein, A., Ohta, H., Bowers, J. E., DenBaars, S. P., and Nakamura, S., Journal of Applied Physics 110, 123709 (2011).CrossRefGoogle Scholar