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Investigation of Titanium Germanide Formation by Raman Scattering and X-Ray Absorption Spectroscopy

Published online by Cambridge University Press:  25 February 2011

D.B. Aldrich ,
C.L. Jahncke ,
R.J. Nemanich  and
D.E. Sayers
D.B. Aldrich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27595-8202
C.L. Jahncke
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27595-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27595-8202
D.E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27595-8202
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Abstract

The reactions of titanium on germanium were studied using Raman spectroscopy and X-ray Absorption Spectroscopy (XAS). Samples used in this study were produced in a custom MBE system with dual E-gun sources, two filament sources, and base pressure <1x10−10 Torr. Ge(100) substrates were prepared by chemical cleaning and homoepitaxial deposition of 500Å - 1000Å Ge at 550°C. Ti was deposited and subsequently annealed at 50°C intervals from 500°C to 700°C. Raman and XANES spectra of the titanium germanides were obtained and used to examine the.evolution of the crystalline structures which form by the interface reactions of Ti on Ge. A low-order phase formed by diffusion controlled growth prior to the formation of TiGe2 (isomorphous with TiSi2 [C54]) by nucleation controlled growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 343
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Ozturk, M.C., Grider, D.T., Wortman, J.J., Littlejohn, M.A., and Zhong, Y., J. Elec. Mat. 19 (10), 1129 (1990)Google Scholar
[2] Aldrich, D.B., Fiordalice, R.W., Jeon, H., Islam, Q., Nemanich, R.J., Sayers, D.E., Mat. Res. Soc. Symp. Proc. 159,167 (1989).Google Scholar
[3] Beyers, R., and Sinclair, R., J. Appl Phys., 57, 5240 (1985)CrossRefGoogle Scholar
[4] Nemanich, R.J., Fulks, R.T., Stafford, B.L., and VanderPlas, H.A., J. Vac. Sci. Technol., A3, 938 (1985).CrossRefGoogle Scholar
[5] Thomas, O., D'Heurle, F.M., Delage, S., and Scilla, G., App. Surf. Sci.,38, 27, (1989)Google Scholar
[6] Lytle, F.W., Greegor, R.B., Sandstrom, D.R., Marques, E.C., Wong, J., Spiro, C.L., Huffman, G.P., and Huggins, F.E., Nucl. Instr. and Meth., 226, 542, (1984)CrossRefGoogle Scholar
[7] Koningsberger, D.C., and Prins, R., X-ray Absorption: Principles, Applications, Techniques of EXAFS, SEXAFS, and XANES. New York, John Wiley & Sons, Inc., 1988 Google Scholar