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Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application

Published online by Cambridge University Press:  01 February 2011

Seongsin M Kim ,
Homan B Yuen ,
Fariba Hatami ,
Akihiro Moto ,
Alan Chin  and
James S Harris
Seongsin M Kim
Affiliation:
[email protected], Stanford University, EE, 420 Via palou, CISX 310, stanford, CA, 94305, United States
Homan B Yuen
Affiliation:
[email protected], Stanford University, stanford, CA, 94305, United States
Fariba Hatami
Affiliation:
[email protected], Humboldt-University at Berlin, Berlin, N/A, Germany
Akihiro Moto
Affiliation:
[email protected], Innovation Core SEI, Inc, Santa Clara, CA, Santa Clara, CA, 95051, United States
Alan Chin
Affiliation:
[email protected], NASA Ames Research Center,, Moffett Field, CA, 94035, United States
James S Harris
Affiliation:
[email protected], Stanford University, stanford, CA, 94305, United States
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Abstract

We report the growth and characterization of a new dilute nitride, InNAsSb/InAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. We obtained mid-infrared luminescence around 4 mm at low temperature, which reveals strong carrier localization behavior at low temperature induced by nitrogen interacted with antimony. The band alignment of InNAsSb/InAs can be type-I and instead of conventional type-II, InAsSb/InAs, and a conduction band offset, Ec,of ∼102meV was obtained.

Keywords

III-Vnitridenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-52
Copyright
Copyright © Materials Research Society 2007

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References

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