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Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy

Published online by Cambridge University Press:  01 February 2011

Masataka Satoh ,
T Saitoh ,
K Nomoto  and
T Nakamura
Masataka Satoh
Affiliation:
[email protected], Hosei University, I.B. Tech, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan, +81-42-387-6094, +81-42-387-6095
T Saitoh
Affiliation:
[email protected], Hosei University, EECE and I.B. Tech, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan
K Nomoto
Affiliation:
[email protected], Hosei University, EECE and I.B. Tech, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan
T Nakamura
Affiliation:
[email protected], Hosei University, EECE and I.B. Tech, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan
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Abstract

The sheet resistance and sheet carrier concentration for Si ion implanted GaN have been investigated as a function of Si ion dosages and ion's energy using van der Pauw method and Hall effect measurement. Si ion implanted GaN is annealed at 1200 °C for 10 sec in N2 gas flow with 50 nm-thick SiNx cap layer to avoid dissociation of GaN. For Si ion energy of 30 keV, the sheet resistance is decreased from 103 to 56 ohm/sq. for the dose ranging from 1 × 1014 to 2 × 1015/cm2. For the Si dose larger than 2 × 1015/cm2, the sheet carrier concentration is saturated around 1 ×s 1015/cm2. Si ion implanted GaN with energy of 50, 80, and 120 keV at a dose of 2 × 1015/cm2 also reveal the sheet carrier concentration of about 1 × 1015/cm2 with the decrease of electron mobility. It is suggested that the implanted Si donors are strongly compensated by the residual implantation-induced defects.

Keywords

nitrideelectrical propertiesion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-31
Copyright
Copyright © Materials Research Society 2007

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References

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