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Investigation of Amorphous IGZO TFT Employing Ti/Cu Source/Drain and SiNx Passivation

Published online by Cambridge University Press:  12 July 2011

Young Wook Lee ,
Sung-Hwan Choi ,
Jeong-Soo Lee ,
Jang-Yeon Kwon  and
Min-Koo Han
Young Wook Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Sung-Hwan Choi
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Jeong-Soo Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Jang-Yeon Kwon
Affiliation:
Department of Material Science and Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
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Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Keywords

oxidesemiconductingTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a19-06
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Hosono, H., Thin Solid Films 515(15), 6000–6014 (2007).10.1016/j.tsf.2006.12.125Google Scholar
2. Yabuta, H., Sano, M., Abe, K., Aiba, T., Den, T., Kumomi, H., Nomura, K., Kamiya, T. and Hosono, H., Applied Physics Letters 89, 112123 (2006).10.1063/1.2353811Google Scholar
3. Lee, J., Kim, D., Yang, D., Hong, S., Yoon, K., Hong, P., Jeong, C., Park, H., Kim, S. Y. and Lim, S. K., 2008 (unpublished).Google Scholar
4. Arai, T., Morosawa, N., Tokunaga, K., Terai, Y., Fukumoto, E., Fujimori, T., Nakayama, T., Yamaguchi, T. and Sasaoka, T., Proceeding of SID, 1033–1036 (2010).10.1889/1.3499825Google Scholar
5. Lu, H.-H., Ting, H.-C., Shih, T.-H., Chen, C.-Y., Chuang, C.-S. and Lin, Y., Proceeding of SID, 1136–1138 (2010).10.1889/1.3499858Google Scholar
6. Mo, Y. G., Kim, M., Kang, C. K., Jeong, J. H., Park, Y. S., Choi, C. G., Kim, H. D. and Kim, S. S., Proceeding of SID, 1037–1040 (2010).10.1889/1.3499826Google Scholar
7. Takasawa, S., Ishibashi, S. and Masuda, T., Proceeding of SID, 1313–1316 (2009).10.1889/1.3256539Google Scholar
8. Jeong, J. K., Won Yang, H., Jeong, J. H., Mo, Y.-G. and Kim, H. D., Applied Physics Letters 93(12), 123508 (2008).10.1063/1.2990657Google Scholar
9. Hong, D. and Wager, J. F., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23(6), L25 (2005).10.1116/1.2127954Google Scholar
10. Son, K.-S., Kim, T.-S., Jung, J.-S., Ryu, M.-K., Park, K.-B., Yoo, B.-W., Park, K., Kwon, J.-Y., Lee, S.-Y. and Kim, J.-M., Electrochemical and Solid-State Letters 12(1), H26 (2009).10.1149/1.3020766Google Scholar
11. Narushima, S., Hosono, H., Jisun, J., Yoko, T. and Shimakawa, K., Journal of Non-Crystalline Solids 274, 313–318 (2000).10.1016/S0022-3093(00)00194-0Google Scholar
12. Braud, F., Torres, J., Palleau, J., Mermet, J. L., Marcadal, C. and Richard, E., Microelectronic Engineering 33, 293–300 (1997).10.1016/S0167-9317(96)00057-3Google Scholar
13. Barquinha, P., Vilà, A. M., Gonçalves, G., Pereira, L, Martins, R., Morante, J. R. and Fortunato, E., IEEE TRANSACTIONS ON ELECTRON DEVICES 55(4), 954–960 (2008).10.1109/TED.2008.916717Google Scholar
14. Kim, H.-K., Han, S.-H., Seong, T.-Y. and Choi, W. K., Journal of The Electrochemical Society 148(3), G114 (2001).10.1149/1.1346617Google Scholar
15. Shimura, Y., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M. and Hosono, H., Thin Solid Films 516(17), 5899–5902 (2008).10.1016/j.tsf.2007.10.051Google Scholar
16. Huang, G.-Y., Wang, C.-Y. and Wang, J.-T., Journal of Physics: Condensed Matter 21(19), 195403 (2009).Google Scholar
17. Jug, K., Nair, N. N. and Bredow, T., Phys. Chem. Chem. Phys 7, 2616–2621 (2005).10.1039/b502507aGoogle Scholar
18. Schaub, R., Wahlstro¨m, E., Rønnau, A., Lægsgaard, E., Stensgaard, I. and Besenbacher, F., SCIENCE 299, 377–379 (2003).10.1126/science.1078962Google Scholar