Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T00:33:29.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Intermixing at the CdS/CdTe Interface and its Effect on Device Performance

Published online by Cambridge University Press:  10 February 2011

R. G. Dhere ,
D. S. Albin ,
D. H. Rose ,
S. E. Asher ,
K. M. Jones ,
M. M. Al-Jassim ,
H. R. Moutinho  and
P. Sheldon
R. G. Dhere
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. S. Albin
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
D. H. Rose
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
S. E. Asher
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
K. M. Jones
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
M. M. Al-Jassim
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H. R. Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
P. Sheldon
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

A study of the CdS/CdTe interface was performed on glass/SnO2/CdS/CdTe device structures. CdS layers were deposited by chemical solution growth to a thickness of 80–100 nm, and CdTe was deposited by close-spaced sublimation at substrate temperatures of 500°, 550°, and 600°C. Post-deposition CdCl2 heat treatment was performed at 400°C. Samples were analyzed by optical spectroscopy, secondary ion mass spectrometry (SIMS), spectral response, and current-voltage measurements. SIMS analysis shows that the intermixing of CdS and CdTe is a function of substrate temperature and post-deposition CdCl2 heat treatment. The degree of intermixing increases with increases in substrate temperature and the intensity of CdCl2 heat treatment. Optical analysis and X-Ray diffraction data show that the phases of CdSxTe1-x are also a function of the same parameters. Formation of a Te-rich CdSxTe1-x alloy is favored for films deposited at higher substrate temperatures. Spectral response of the devices is affected by the degree of alloying at the interface. The degree of alloying is indicated by simultaneous changes in long wavelength response (due to the formation of lower bandgap intermixed CdSxTe1-x) and the short wavelength response (due to the change in CdS thickness). Device performance is heavily influenced by alloying at the interface. With optimized intermixing, improvements in Voc, and diode quality factors are observed in the resulting devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Birkmire, R.W. and Meyers, P.V., Proceedings of 1st WCPEC, 76 (1994).Google Scholar
2) Ohata, K., Saraie, J., and Tanaka, T., Jap. J. Appl. Phys., 12(8), 1198 (1973).Google Scholar
3) Nunoue, S., Hemmi, T., and Kato, E., J. Electrochem. Soc., 137(4), 1248 (1990).Google Scholar
4) Bonnet, D., Phys. Stat. Sol. (a), 3,, 913 (1970).Google Scholar
5) Ohata, K., Saraie, J., and Tanaka, T., Jap. J. Appl. Phys., 12(10), 1641 (1973).Google Scholar
6) Uda, H., Matsumoto, H., Komatsu, Y., Nakano, A., and Ikegami, S., Proc. of IEEE PVSC conf., 801 (1982).Google Scholar
7) Roh, J. and Im, H., J. Mat. Sc., 23, 2267 (1988).Google Scholar
8) Clemmink, I., Burgelman, M., Casteleyn, M., Poorter, J. De, and Vervaet, A., Proc. of IEEE PVSC conf., 1114 (1991).Google Scholar
9) ) Clemminck, I., Burgelman, M., Casteleyn, M., De Poorter, J., and Vervaet, A., Proc. of 10th European PVSC conf., 577 (1991).Google Scholar
10) McCandless, B. and Birkmire, R., Solar Cells, 31, 527(1991).Google Scholar
11) Mao, D., Feng, L., Zhu, Y., Tang, J., Song, W., Collins, R., Williamson, D., and Trefny, J., Proc. of 13th NREL program review, AIP proceedings no. 353, 352 (1995).Google Scholar
12) McCandless, B. and Hegedus, S., Proc. of IEEE PVSC conf., 967 (1991).Google Scholar
13) Ramanathan, K., Dhere, R.G., Coutts, T.J., Chu, T.L., and Chu, S., Proceedings of the 11th PVAR&D Project Meeting, Denver, CO, 1992, AIP Conference Proceedings 268, 263 (1992).Google Scholar
14) Chu, T.L., Solar Cells, 23, p. 31 (1988).Google Scholar
15) Dhere, R.G., Ramanathan, K., Keyes, B.M., and Moutinho, H.R., Proceedings of the 12th Photovoltaic Program Review, Denver, CO, 1993, AIP Conference Proceedings 306, 335 (1993).Google Scholar
16) Dhere, R.G., Asher, S.E., Jones, K.M., Al-Jassim, M.M., Moutinho, H.R., Rose, D.H., Dippo, P. and Sheldon, P., Proceedings of the 12th Photovoltaic Program Review, Denver, CO, 1995, AIP Conference Proceedings no. 353, 392 (1995).Google Scholar
17) Asher, S.E., Dhere, R.G., Jones, K.M., Moutinho, H., Reedy, R., and Sheldon, P., to be published.Google Scholar