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Interface Recombination Velocities in Layered GaAs and AlGaAs/GaAs Structures Grown by OMVPE

Published online by Cambridge University Press:  26 February 2011

S. Bothra ,
R. Venkatasubramanian ,
S.K. Ghandhi  and
J.M. Borrego
S. Bothra
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
R. Venkatasubramanian
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
S.K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
J.M. Borrego
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute, Troy, N.Y. 12180
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Abstract

The interface recombination velocity at n+ GaAs/n GaAs and n+ Al15 Ga85 As/n GaAs are reported for various dopings. It is seen that with an n+ GaAs cap layer it is possible to reduce the interface recombination velocity to ∼ 4.4 × 103 cm/s. This can be further reduced by employing an AlGaAs cap, due to the increased barrier caused by the valence band discontinuity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 183
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Hauser, J.R. and Dunbar, P.M., Sol. State Elec., 18, 715 (1974).Google Scholar
2.Borrego, J.M., Gutmann, R.J., Jensen, N. and Paz, O., Sol. State Elec., 30(2), 195 (1987).Google Scholar
3.Nelson, R.J. and Sobers, R.G., J. Appl. Phys., 49 (12), 6103 (1978).Google Scholar