Published online by Cambridge University Press: 26 February 2011
The interface recombination velocity at n+ GaAs/n GaAs and n+ Al15 Ga85 As/n GaAs are reported for various dopings. It is seen that with an n+ GaAs cap layer it is possible to reduce the interface recombination velocity to ∼ 4.4 × 103 cm/s. This can be further reduced by employing an AlGaAs cap, due to the increased barrier caused by the valence band discontinuity.