No CrossRef data available.
Article contents
Interface Properties of Heterovalent InSb Multilayer Structures
Published online by Cambridge University Press: 25 February 2011
Abstract
Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the presence of periodic heterointerfaces. TEM, x-ray, and x-ray photoelectron spectroscopy (XPS) measurements are found to provide a sensitive indicator for the presence of ultra-thin interfacial layers. Double barrier structures in the MnTe/InSb/MnTe configuration exhibit the negative differential resistance which is characteristic of resonant tunneling diodes.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1991