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Interface Failure of Gold Covered SiO2 Substrate With TiW and Nb Intermediate Adhesion Layers

Published online by Cambridge University Press:  22 February 2011

M. Liehr ,
J. P. Delrue ,
N. Herbots ,
R. Vanden Berghe  and
R. Caudano
M. Liehr
Affiliation:
Laboratoire de Spectroscopie Electronique, IRIS, FNDP, 61 rue de Bruxelles B-5000 Namur, Belgium.
J. P. Delrue
Affiliation:
Laboratoire de Spectroscopie Electronique, IRIS, FNDP, 61 rue de Bruxelles B-5000 Namur, Belgium.
N. Herbots
Affiliation:
Laboratoire de Spectroscopie Electronique, IRIS, FNDP, 61 rue de Bruxelles B-5000 Namur, Belgium.
R. Vanden Berghe
Affiliation:
Laboratoire de Spectroscopie Electronique, IRIS, FNDP, 61 rue de Bruxelles B-5000 Namur, Belgium.
R. Caudano
Affiliation:
Laboratoire de Spectroscopie Electronique, IRIS, FNDP, 61 rue de Bruxelles B-5000 Namur, Belgium.
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Abstract

In this paper, we report an electron microscopy study (SEM and TEM) of the Au-TiW-SiO2 structure annealed in ambient air up to 600°C. Scanning Auger microscopy has also been used to characterize the interfaces. Growth of pyramid- like structures was found to occur under heat treatment above 450°C. Volume increase and adhesion failure due to oxidation of the TiW layer and weak points in the Au top layer were found to be at the origin of this particular growth. Similar surface failures have been reported under oxidation at higher temperature for the tungsten silicide – SiO2 systems. According to the assumed growth mechanism, the necessary conditions for a pyramid growth have been defined and checked on another multilayer structure, that is the Au-Nb-SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 40: Symposium J – Electronic Packaging Materials Science I , 1984 , 405
Copyright
Copyright © Materials Research Society 1985

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References

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