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Interface and Luminescence Properties of Pulsed Laser Deposited MgxZn1-xO/ZnO Quantum Wells with Strong Confinement

Published online by Cambridge University Press:  01 February 2011

Susanne Heitsch ,
Gregor Zimmermann ,
Alexander Müller ,
Jörg Lenzner ,
Holger Hochmuth ,
Gabriele Benndorf ,
Michael Lorenz  and
Marius Grundmann
Susanne Heitsch
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany, +49-(0)341-97-32672, +49-(0)341-97-32668
Gregor Zimmermann
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Alexander Müller
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Jörg Lenzner
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Holger Hochmuth
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Gabriele Benndorf
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Michael Lorenz
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
Marius Grundmann
Affiliation:
[email protected], Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, Leipzig, 04103, Germany
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Abstract

MgxZn1-xO/ZnO/MgxZn1-xO quantum wells (QWs) (0.12 ≤ x ≤ 0.15) have been grown on a-plane sapphire substrates by pulsed laser deposition. The nominal ZnO well layer thickness lies between 1.2 nm and 6 nm. Atomic force microscopy (AFM) investigations at ZnO/MgxZn1−xO heterostructures show the film-like structure of the ZnO layers. Their root mean square surface roughness of ∼ 0.5 nm gives information about the interface roughness in the QWs. AFM results from the MgxZn1−xO barrier layers show the same surface structure and roughness. We confirmed the lateral homogeneity of the Mg distribution in the MgxZn1−xO barrier layers by scanning cathodoluminescence measurements. The QWs show a bright and laterally homogeneous luminescence, suggesting good crystalline quality of the ZnO wells. The measured QW photoluminescence energies agree well with calculated values and display the presence of the quantum-confined Stark effect. As a result of quantum confinement a high-energy shift of the ZnO excitonic photoluminescence of 222 meV is observed in the thinnest QW.

Keywords

II-VIlayeredluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-23
Copyright
Copyright © Materials Research Society 2007

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References

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