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Integration of GaAs on Ge/Si towers by MOVPE

Published online by Cambridge University Press:  02 July 2013

A. G. Taboada ,
T. Kreiliger ,
C. V. Falub ,
M. Richter ,
F. Isa ,
E. Müller ,
E. Uccelli ,
P. Niedermann ,
A. Neels  and
G. Isella
...Show all authors
A. G. Taboada
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
T. Kreiliger
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
C. V. Falub
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
M. Richter
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
F. Isa
Affiliation:
L-NESS and Dipartamento di Fisica-Politecnico di Milano,Via Anzani 42, I-22100 Como, Italy
E. Müller
Affiliation:
Electron Microscopy ETH Zürich (EMEZ), Wolfgang-Pauli-Str. 16, CH-8093 Zürich, Switzerland
E. Uccelli
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
P. Niedermann
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
A. Neels
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
G. Isella
Affiliation:
L-NESS and Dipartamento di Fisica-Politecnico di Milano,Via Anzani 42, I-22100 Como, Italy
J. Fompeyrine
Affiliation:
IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
A. Dommann
Affiliation:
Microsystems Technology, CSEM, Jaquet Droz 1, CH-2002 Neuchâtel, Switzerland
H. von Känel
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Schafmattstr. 16 CH-8093 Zürich, Switzerland
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Abstract

We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crystals with a height of 2 μm and lateral sizes up to 15×15 μm2 by both X-ray diffraction and photoluminescence.

Keywords

vapor phase epitaxy (VPE)x-ray diffraction (XRD)Ge
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 283 - 289
Copyright
Copyright © Materials Research Society 2013 

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References

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