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In-Situ Stress Measurements During Dry Oxidation of Silicon

Published online by Cambridge University Press:  10 February 2011

Chia-Liang Yu ,
Paul A. Flinn  and
John C. Bravman
Chia-Liang Yu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
Paul A. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA. 94305
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Abstract

In this study, we present results of both in-situ and ex-situ measurements of stress generated during dry oxidation of silicon. We show that the mechanical stress in as-grown dry oxides is a strong function of oxidation temperature and oxide thickness, but a weak function of oxygen partial pressure. We have identified a structural relaxation phenomenon after the oxide is formed, and found that the viscosity of the oxide increases with its age; consequently, the stress relaxation slows down due to this increase of viscosity. In this paper, we present a one-dimensional mechanical model to simulate the stress generation and relaxation during dry oxidation of silicon. The simulations of both in-situ and ex-situ tests are in good agreement with the experimental measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 95
Copyright
Copyright © Materials Research Society 1997

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References

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