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‘In-situ’ Solution Processed Room Temperature Ferromagnetic MgO Thin Films Printed by Inkjet Technique

Published online by Cambridge University Press:  08 March 2011

Yan Wu ,
Yiqiang Zhan ,
Mats Fahlman ,
Mei Fang ,
K. V. Rao  and
Lyubov Belova
Yan Wu
Affiliation:
Department of Materials Science, the Royal Institute of Technology, Stockholm, Sweden Faculty of Materials Sci. and Chemical Eng., China Univ. of Geosciences, Wuhan, China
Yiqiang Zhan
Affiliation:
Surface Physics and Chemistry Group, IFM, Linköping University, Linköping, Sweden
Mats Fahlman
Affiliation:
Surface Physics and Chemistry Group, IFM, Linköping University, Linköping, Sweden
Mei Fang
Affiliation:
Department of Materials Science, the Royal Institute of Technology, Stockholm, Sweden
K. V. Rao*
Affiliation:
Department of Materials Science, the Royal Institute of Technology, Stockholm, Sweden
Lyubov Belova
Affiliation:
Department of Materials Science, the Royal Institute of Technology, Stockholm, Sweden
*
*Address correspondence to: [email protected]
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Abstract

We report on ‘in-situ’ solution processed homogeneous (200) oriented MgO ~85nm thin films deposited on Si substrates by inkjet printing. These films are found to show ferromagnetic order beyond room temperature with a saturation magnetization MS as high as ~0.63 emu/g. X-ray photoelectron spectroscopy investigations show the absence of any possible contamination effects, while the Mg 2p, and O 1s spectra indicate that the role of defect structure at the Mg site is important in the observed magnetism. By controlling the pH values of the precursors the concentration of the defects can be varied and hence tune the magnetization at room temperature. The origin of magnetism in these MgO thin films appears to arise from the cation vacancies.

Keywords

solution depositionferromagneticthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k12-26
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Hu, J., Zang, Z., Zhao, M., Qin, H., Jiang, M., Appl. Phys. Lett., 93, 192503 (2008).Google Scholar
2. Beltrán, J.I., Monty, C., Balcells, L., Martínez-Boubeta, C., Solid State Commun., 149, 1654–1657 (2009).Google Scholar
3. Gao, F., Hu, J., Yang, C., Zheng, Y., Qin, H., Sun, L., Kong, X., Jiang, M., Solid State Commun., 149, 855–858 (2009).Google Scholar
4. Araújo, C.M., Kapilashrami, M., Jun, X., Jayakumar, O.D., Nagar, S., Wu, Y., Århammar, C., Johansson, B., Belova, L., Ahuja, R., Gehring, G.A., Rao, K.V., Appl. Physics. Lett., 96, 232505 (2010).Google Scholar
5. Calvert, P., Chem. Mater., 13, 3299 (2001).Google Scholar
6. Sugiyama, S., Sato, K., Yamasaki, S., Kawashiro, K., Hayashi, H., Catal. Lett., 14, 127–133 (1992).Google Scholar
7. Kim, J.Y., Jung, H.S., Hong, K.S., J. Am. Ceram. Soc., 88, 784–787 (2005).Google Scholar
8. Jung, H.S., Lee, J.K., Kim, J.Y., Hong, K.S., J. Solid State Chem., 175, 278–283(2003).Google Scholar
9. Osorio-Guillén, J., Lany, S., Barabash, S.V., Zunger, A., Phys. Rev. Lett., 96, 107203 (2006).Google Scholar
10. Portillo, R., Lopez, T., Gomez, R., Morales, A., Novaro, O., Langmuir, 12, 40–44 (1996).Google Scholar
11. Baranek, P., Pinarello, G.,; Pisani, C., Dovesi, R., Phys. Chem. Chem. Phys. 2, 3893–3901 (2000).Google Scholar
12. Wang, J.A., Novaro, O., Bokhimi, X., Lopez, T., Gomez, R., Navarrete, J., Llanos, M.E., Lopez-Salinas, E., J.Phys. Chem. B, 101, 7448–7451(1997).Google Scholar
13. Peterka, D., Tegenkamp, C., Schröder, K.M., Ernst, W., Pfnür, H., Surf. Sci., 431, 146–155 (1999).Google Scholar
14. Ochs, D., Maus-Friedrichs, W., Brause, M., Günster, J., Kempter, V., Puchin, V., Shluger, A., Kantorovich, L., Surf. Sci., 365, 557–571 (1996).Google Scholar
15. Katayama, T., Yuasa, S., Velev, J., Zhuravlev, M.Y., Jaswal, S.S., Tsymbal, E.Y., Appl. Phys. Lett., 89, 112503–3 (2006).Google Scholar
16. Snoeck, E., Baules, P., BenAssayag, G., Tiusan, C., Greullet, F., Hehn, M., Schuhl, A., J. Phys.: Condensed Matter, 20, 055219 (2008).Google Scholar