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In-Situ Formation and Characterization of α-Si3N4 Whiskers from Nano Amorphous Si-N-C Powders

Published online by Cambridge University Press:  15 February 2011

Ya-Li Li ,
Yong Liang  and
Zhuang-Qi Hu
Ya-Li Li
Affiliation:
(National Key Lab of RSA, Institute of Metal Research, Academia Sinica, 72 Whenhua Road, Shenyang, 110015, P.R.China)
Yong Liang
Affiliation:
(National Key Lab of RSA, Institute of Metal Research, Academia Sinica, 72 Whenhua Road, Shenyang, 110015, P.R.China)
Zhuang-Qi Hu
Affiliation:
(National Key Lab of RSA, Institute of Metal Research, Academia Sinica, 72 Whenhua Road, Shenyang, 110015, P.R.China)
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Abstract

α-Si3N4 whiskers were formed from laser-synthesized nanoscale amorphous Si-N-C powders at 1873K under 1 atm N2. The as-formed whiskers were characterized by TEM, STEM, XRD techniques and the process conditions for the whisker growth were studied. The whiskers exhibit various morphologies such as the long thick straight, the prismatic, the ribbon-like, and knuckled whiskers. The gas phase reaction among N2, SiO, and CO gases leads to Si3N4 whisker growth on the pre-crystallized α-Si3N4 grains by the Vapor-Solid (VS) mechanism along specific crystal planes such as {1101}., which ensures an in-situ formation. No addition of other catalyst and the atomic combination of the elements in the Si-N-C powders ensure a high purity of the whiskers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 275
Copyright
Copyright © Materials Research Society 1995

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References

[1] Ziegler, G., Heinrich, J. and Wotting, G., J.Mater.Sci., 22, 3041 (1987)Google Scholar
[2] Niwano, K., in Silicon Nitride-1, edited by Somiga, S. et al. (Elsevier Applied Science, London and New York, 1989) pp. 117 Google Scholar
[3] Wang, M.J., Wada, H., J.Mater.Sci., 25, 1690(1990)Google Scholar
[4] Cribkov, V.N., Silaev, V.A., Schetanov, B.V., Umantsev, E.L. and Isaikin, A.S., Soviet Physics Crystallography, 16, 852(1972)Google Scholar
[5] Kijima, K., Setaka, N., and Tanaka, H., J. Crystal Growth, 24/25, 183(1974)Google Scholar
[6] Hayashi, T., Kawabe, S. and Saito, H., Yogyo-Kyokai-Shi, 94, 19 (1986)Google Scholar
[7] Ya-li, Li, Yong, Liang, Fen, Zheng and Zhuang-qi, Hu, Mater.Sci.&Eng., 174 A2, L24(1994)Google Scholar
[8] Sasaki, K., Kuroda, K., Imura, K. and Saka, H., Yogyo-Kyokai-Shi, 94(8), 773 (1986)iskers (Mills & Boon Limited, London, 1972) pp. 1410.2109/jcersj1950.94.1092_773Google Scholar
[9] Campbell, W.B., in Whisker Technology, edited Levitt, A.P. (Wiley-Inter-Science, John Wiley & Sons, New York, 1970) pp. 15 Google Scholar
[10] Zhang, S.C. and Cannon, W.R., J.Am.Ceram.Soc., 67[10], 691(1984)Google Scholar
[11] Li, Ya-li, Liang, Yong, Hu, Zhuang-qi, Ceramic International, (1994) in pressGoogle Scholar
[12] Li, Ya-li, Liang, Yong and Hu, Zhuang-qi, Chinese Material Sicence and Technology, (1994) in pressGoogle Scholar