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InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates

Published online by Cambridge University Press:  01 February 2011

Alexander Syrkin ,
Alexander Usikov ,
Vitali Soukhoveev ,
Oleg Kovalenkov ,
Vladimir Ivantsov ,
Vladimir Dmitriev ,
Charless Collins ,
Eric Readinger ,
Natalia Shmidt  and
Sergey Nikishin
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Alexander Syrkin
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Alexander Usikov
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Vitali Soukhoveev
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Oleg Kovalenkov
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Vladimir Ivantsov
Affiliation:
[email protected], Technologies and Devices International, Inc.
Vladimir Dmitriev
Affiliation:
[email protected], Technologies and Devices International, Inc., United States
Charless Collins
Affiliation:
[email protected], U.S. Army Research Laboratory, United States
Eric Readinger
Affiliation:
[email protected], U.S. Army Research Laboratory, United States
Natalia Shmidt
Affiliation:
[email protected], Ioffe Physico-Technical Institute, Russian Federation
Sergey Nikishin
Affiliation:
[email protected], Texas Tech University, United States
Vladimir Kuryatkov
Affiliation:
[email protected], Texas Tech University, United States
Daoying Song
Affiliation:
[email protected], Texas Tech University, United States
Mark Holtz
Affiliation:
[email protected], Texas Tech University
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Abstract

This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

Keywords

vapor phase epitaxy (VPE)III-Vmorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF08-02
Copyright
Copyright © Materials Research Society 2006

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References

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