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InGaN-Channel FETs – Growth, Technology and Characteristics

Published online by Cambridge University Press:  21 March 2011

E. Kohn ,
I. Daumiller ,
M. Neuburger ,
M. Seyboth ,
C. Kirchner  and
M. Kamp
E. Kohn
Affiliation:
Dept. of Electron Devices and Circuits, University of Ulm, D-89081 Ulm, Germany
I. Daumiller
Affiliation:
Dept. of Electron Devices and Circuits, University of Ulm, D-89081 Ulm, Germany
M. Neuburger
Affiliation:
Dept. of Electron Devices and Circuits, University of Ulm, D-89081 Ulm, Germany
M. Seyboth
Affiliation:
Dept. of Optoelectronics, University of Ulm, D-89081 Ulm, Germany
C. Kirchner
Affiliation:
Dept. of Optoelectronics, University of Ulm, D-89081 Ulm, Germany
M. Kamp
Affiliation:
Global Light Industries, 47475 Kamp – Lintfort, Germany
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Abstract

Making use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis structure is mainly generated by the strain field in the InGaN layer and is an electron/hole dipole sheet charge located at the opposite InGaN/GaN interfaces. To obtain nchannel characteristics the hole charge at the rear interface (for Ga-face oriented material) is compensated by donor doping of the channel or by modulation doping from the real GaN barrier layer. Growth, processing technology and characteristics of first fabricated devices is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.1
Copyright
Copyright © Materials Research Society 2001

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References

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