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Infra-Red Tunneling Absorption in Semiconductor Double Quantum Wells in Tilted Magnetic Fields

Published online by Cambridge University Press:  10 February 2011

S. K. Lyo
S. K. Lyo*
Affiliation:
Sandia National Laboratories, Albuquerque, N. M. 87185
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Abstract

Using a linear response theory, interwell-tunneling absorption of infra-red photons is calculated in a double-quantum-well structure with a wide center barrier in tilted magnetic fields. Tunneling occurs between the ground sublevels of the two quantum wells, with an energy difference that is tunable. The absorption intensity depends strongly on the temperature and the carrier densities. The resonance width is narrow even at high temperatures due to the two-dimensional phase restriction for tunneling. In magnetic fields, both the in-plane and perpendicular components of the field sensitively control and tune the absorption lineshape in very different ways, affecting the absorption threshold, the resonance energy of absorption, and the linewidth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 189
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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