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Infrared Reflectance Characterization of a GaAs-AlAs Superlattice

Published online by Cambridge University Press:  25 February 2011

J. M. Zavada ,
G. K. Hubler ,
H. A. Jenkinson  and
W. D. Laidig
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709
G. K. Hubler
Affiliation:
Naval Research Laboratory, Washington, DC 20375
H. A. Jenkinson
Affiliation:
US Army Armament R&D Center, Dover, NJ 07801
W. D. Laidig
Affiliation:
North Carolina State University, Raleigh, NC 27695
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Abstract

The optical properties of a GaAs-AlAs superlattice have been examined using the non-destructive technique of infrared reflectance spectroscopy. Through this technique, the absorption edge, the effective superlattice refractive index, the thickness, and the optical grading of the superlattice-substrate were determined. Location of the absorption edge was made from the reflectance spectrum and showed general agreement with photoluminescence measurements. A more detailed analysis of the infrared spectra indicated the presence of a transition region between the substrate and the superlattice. Based on a non-linear least squares method for fitting the experimental data, a dispersion relation for the dielectric function was obtained. This dielectric function yielded a value for the superlattice refractive index that was lower than that of the corresponding, homogeneous, AlGaAs alloy film for wavelengths between 1.0 and 2.5 micrometers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 257
Copyright
Copyright © Materials Research Society 1987

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References

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