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Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing

Published online by Cambridge University Press:  01 February 2011

Nathan J Hoffman ,
Roger Ketcheson ,
Daniel Stambaugh ,
Laura Safran ,
Richard Campos ,
Jerry Mase  and
Daniel Codi
Nathan J Hoffman
Affiliation:
[email protected], NXP Semiconductors, Process Engineering, Hopewell Junction, New York, United States
Roger Ketcheson
Affiliation:
[email protected], NXP Semiconductors, Product Engineering, Hopewell Junction, New York, United States
Daniel Stambaugh
Affiliation:
[email protected], NXP Semiconductors, Process Engineering, Hopewell Junction, New York, United States
Laura Safran
Affiliation:
[email protected], NXP Semiconductors, Reliability / PFA Engineering, Hopewell Junction, New York, United States
Richard Campos
Affiliation:
[email protected], NXP Semiconductors, Reliability / PFA Engineering, Hopewell Junction, New York, United States
Jerry Mase
Affiliation:
[email protected], NXP Semiconductors, Process Engineering, Hopewell Junction, New York, United States
Daniel Codi
Affiliation:
[email protected], NXP Semiconductors, Operations, Hopewell Junction, New York, United States
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Abstract

Titanium and cobalt silicides have long been used as gate electrode materials for very large-scale integrations (VLSI) circuits. As scaling has pushed the industry to quarter micron technologies and below, cobalt has become the material of choice for forming silicides, since it can maintain its low resistivity on much narrower line widths. Oxidation of the cobalt film is a concern during silicide processing, as the cobalt oxide will not be removed during the cobalt etch step. To protect against the oxidation of the cobalt layer during the silicidation process, the reaction is conducted underneath a titanium nitride (TiN) capping layer. Variations in the TiN capping layer thickness were investigated to determine the affect on oxygen sensitivity of the cobalt silicide process. A strong correlation was found to the thickness of the TiN-capping layer, to the oxygen concentration required to oxidize cobalt during the silicidation process.

Keywords

semiconductingCoSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-07
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Kim, J., Kim, Y., and Seo, H., “Electrical Characterization of Silicided CMOS Devices for Embedded DRAM an Logic with Ti and TiN Capping Layers,” IEEE Int'l Symposium on Electronic Materials and Packaging, 185–187 (2001)Google Scholar