Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-08T00:21:15.778Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of the Temperature of Implantation on the Morphology of Defects in MeV Implanted GaAs.

Published online by Cambridge University Press:  21 February 2011

G. Braunstein ,
Samuel Chen ,
S.-Tong Lee  and
G. Rajeswaran.
G. Braunstein
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650.
Samuel Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650.
S.-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650.
G. Rajeswaran.
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650.
Get access

Abstract

We have studied the influence of the temperature of implantation on the morphology of the defects created during 1-MeV implantation of Si into GaAs, using RBS-channeling and TEM. The annealing behavior of the disorder has also been investigated.

Implantation at liquid-nitrogen temperature results in the amorphization of the implanted sample for doses of 2×1014 cm−2 and larger. Subsequent rapid thermal annealing at 900°C for 10 seconds leads to partial epitaxial regrowth of the amorphous layer. Depending on the implantation dose, the regrowth can proceed from both the front and back ends of the amorphous region or only from the deep end of the implanted zone. Nucleation and growth of a polycrystalline phase occurs concurrently, limiting the extent of the epitaxial regrowth. After implantation at room temperature and above, two distinct types of residual defects are observed or inferred: point defect complexes and dislocation loops. Most of the point defects disappear after rapid thermal annealing at temperatures ≥ 700°C. The effect of annealing on the dislocation loops depends on the distance from the surface of the sample. Those in the near surface region disappear upon rapid thermal annealing at 700°C, whereas the loops located deeper in the sample grow in size and begin to anneal out only at temperatures in excess of 900°C. Implantation at temperatures of 200 - 300°C results in a large reduction in the number of residual point defects. Subsequent annealing at 900°C leads to a nearly defect-free surface region and, underneath that, a buried band of partial dislocation loops similar to those observed in the samples implanted at room temperature and subsequently annealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 191
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Sadana, D.K., Nucl. Instrum. Methods, B7/8, 375 (1985).Google Scholar
2) Opyd, W.G., Gibbons, J.F., Bravman, J.C., and Parker, M.A., Appl. Phys. Lett., 49. 974 (1986).Google Scholar
3) Williams, J.S., Elliman, R.G., Johnson, S.T., Sengupta, D.K., and Zemansky, J.M., in: Processing and Characterization of Materials Using Ion Beams, Mat. Res. Soc. Symp. Proc., in press.Google Scholar
4) Lee, S.–Tong, Braunstein, G., and Chen, Samuel, Mat. Res. Soc. Symp. Proc. 126, 183 (1988).Google Scholar
5) Chen, Samuel, Braunstein, G., and Lee, S.-Tong, in: Characterization of Structure and Chemistry of Materials, Mat. Res Soc. Symp. Proc., in press.Google Scholar
6) Braunstein, G., Zheng, L.-R., Chen, Samuel, Lee, S.-Tong, Peterson, D.L., Ko, K.Y., and Rajeswaran, G., in: Processing and Characterization of Materials Using Ion Beams. Mat. Res. Soc. Symp. Proc., in press.Google Scholar
7) Biersack, J.P. and Haggmark, L.G., Nucl. Instrum. Methods, 174, 257 (1980).Google Scholar
8) Xiong, F., Nieh, C.W., Jamieson, D.N., Vreeland, T. Jr., and Tombrello, T.A., Mat. Res. Soc. Symp. Proc., 100, 105 (1988).Google Scholar