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Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT

Published online by Cambridge University Press:  10 February 2011

Chun-Ying Chen  and
Jerzy Kanicki
Chun-Ying Chen
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109
Jerzy Kanicki
Affiliation:
Department of Electrical Engineering and Computer Science, Center for Display Technology and Manufacturing, The University of Michigan, Ann Arbor, MI 48109
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Abstract

We have proposed a new two-dimensional simulation model, which takes into account the density of states of hydrogenated amorphous silicon (a-Si:H) and temperature-dependence of the source/drain series resistances (Rs), to explain the dependence of the activation energy (Eact) of drain-source current (IDs) on gate-source bias (VGs) in a-Si:H thin-film transistors (TFTs). We found that the influence of series resistance cannot be ignored, else an overestimated Eact will result. The results of our simulation are in agreement with experimentally observed saturation of the Eact at higher VGs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 77
Copyright
Copyright © Materials Research Society 1997

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References

1. Kim, S. K., Lee, K. S. and Jang, J., J. Korean Phys. Soc., 28, S116 (1995).Google Scholar
2. Lustig, N., Kanicki, J., Wisnieff, R. and Griffith, J., Mat. Res. Soc. Proc., 118, 267 (1988).Google Scholar
3. Khan, B. A. and Pandya, R., IEEE Trans. Elec. Dev., 37, 1727 (1990).Google Scholar
4. Bae, B. S. and Lee, C., J. Appl. Phys., 68, 3439 (1990).Google Scholar
5. Sah, C.-T, Proc. IEEE, 55 (1968).Google Scholar
6. Chen, C.-Y. and Kanicki, J., Proc. AM-LCD '95, 46 (1995).Google Scholar
7. Kanicki, J., Libsch, F. R., Griffith, J. and Polastre, R., J. Appl. Phys., 69, 2339 (1991).Google Scholar
8. Press, W. H., Teukolsky, S. A., Vetterling, W. T. and Flannery, B. P., Numerical Recipes in C, (Cambridge University Press 1992).Google Scholar
9. Shur, M., Physics of Semiconductor Devices, (Prentice-Hall, New Jersey, 1990), p. 361.Google Scholar
10. Chen, C.-Y. and Kanicki, J., Digest of AM-LCD '95, 145 (1995).Google Scholar
11. Kanicki, J., Hasan, E., Griffith, J., Takamori, T. and Tsang, J. C., Mat. Res. Soc. Proc., 149, 239 (1989).Google Scholar
12. Reeves, G. K. and Harrison, H. B., IEEE Electron Dev. Lett., 3, 111 (1982).Google Scholar