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The Influence of Stress-Induced Voiding on the Electromigration Behavior of AlCu Interconnects

Published online by Cambridge University Press:  17 March 2011

A.E. Zitzelsberger  and
A.H. Fischer
A.E. Zitzelsberger
Affiliation:
Infineon Technologies Reliability Methodology Otto Hahn Ring 6 D-81739 Munich, Germany
A.H. Fischer
Affiliation:
Infineon Technologies Reliability Methodology Otto Hahn Ring 6 D-81739 Munich, Germany
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Abstract

The influence of stress-induced voiding on the electromigration (EM) behavior has been investigated on narrow via-line structures. For this purpose the EM performance of metal lines containing stress-induced voids already before the electrical operation has been compared with samples without stress-induced voids. We found, that pre-existing stress voids in the metal lines do not affect the activation energy Ea and lead only to a small decrease of the EM median time to failure, but cause a relevant reduction of the current density exponent down to n = 1. As a consequence, a tremendous decrease of the electromigration limited life time is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D8.9.1
Copyright
Copyright © Materials Research Society 2000

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