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Influence of post-deposition annealing on structural, optical and electrical characteristics of NiO/ZnO thin film hetero-junction

Published online by Cambridge University Press:  07 March 2012

Manisha Tyagi ,
Monika Tomar  and
Vinay Gupta
Manisha Tyagi
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, INDIA
Monika Tomar
Affiliation:
Physics Department, Miranda House, University of Delhi, Delhi-110007, INDIA
Vinay Gupta*
Affiliation:
Department of Physics and Astrophysics, University of Delhi, Delhi-110007, INDIA
*
*email: [email protected]
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Abstract

Transparent p-n hetero-junction diodes are fabricated using, p-type NiO and n-type ZnO thin films deposited onto a Pt/Ti/glass substrate utilizing RF sputtering technique. The prepared hetero-junctions are studied for the structural, electrical and optical properties and the effect of post-deposition annealing is investigated through I-V measurements and XRD analysis. The as deposited hetero-junction is found to be giving ohmic behaviour while with post-annealing treatment it result in rectification with a ratio of forward-to-reverse current as high as 15 in the range -1.0 to 1.0 V. Forward threshold and the reverse breakdown voltages are found to be about 0.5 and -2.7 V, respectively. The forward-bias I-V characteristics are dominated by the flow of space-charge-limited current with an optical transmission of above 50 % in the visible region important for the transparent electronic device fabrication.

Keywords

devicesHall effectthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m13-27
Copyright
Copyright © Materials Research Society 2012

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References

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