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Influence of PbTiO3 Buffer Layers on Microstructural Properties of Pb(Zr,Ti)O3 Films Deposited by Sputtering

Published online by Cambridge University Press:  10 February 2011

E. Cattan ,
R. Roma ,
G. Velu ,
B. Jaber ,
D. Remiens  and
B. Thierry
E. Cattan
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
R. Roma
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
G. Velu
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
B. Jaber
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
D. Remiens
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
B. Thierry
Affiliation:
LAboratoire des Matériaux Avancés Céramiques, CRITT, Université de Valenciennes et du Hainaut-Cambrésis, ZI Champ de l'Abbesse 59600 Maubeuge (France).
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Abstract

Pb(Zr,Ti)O3 (PZT) films with very thin PbTiO3 (PT) buffer layers inserted between the film and the Si/SiO2/Ti/Pt substrate were grown by a rf magnetron sputtering technique. The Xray diffraction patterns and the surface morphology of PT as a function of the thickness, in the range of 20 to 400 Å, were first investigated. Such a marked contrast in morphological features was not observed when the thickness was above 400 Å. The films were grown in-situ at 500°C. We found modification of the PT orientation when its thickness varied between 20 Å and 400 Å. This implies a gradual evolution of the lattice parameters in the nucleation stage of PT films. Insertion of these buffer layers was found to exert marked effects. Up to 400 Å the PT was grown with a [100] preferred orientation. The orientation of PZT could be controlled by changing the thickness and then the orientation of PT. The results will be discussed in terms of the effects of the buffer layer on the crystalline structure and the surface morphology of PZ

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 291
Copyright
Copyright © Materials Research Society 1996

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