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Influence of O2/Ar Ratio on the Properties of Transparent Conductive Titanium-Doped Indium Oxide Films by DC Radio-Frequency Sputtering

Published online by Cambridge University Press:  31 January 2011

Lei Li ,
Li Li ,
Xin Yu ,
Hai Yu ,
Chen Chen ,
Zhenyu Song ,
Menglong Cong  and
Yiding Wang
Lei Li
Affiliation:
[email protected]@yahoo.com.cn, State Key Laboratory on Integrated Optoelectronics, changchun, China
Li Li
Affiliation:
[email protected], State Key Laboratory on Integrated Optoelectronics, changchun, JiLin, China
Xin Yu
Affiliation:
[email protected], College of Electronic Science and Engineering, changchun, JiLin, China
Hai Yu
Affiliation:
[email protected], College of Electronic Science and Engineering, changchun, JiLin, China
Chen Chen
Affiliation:
[email protected], College of Electronic Science and Engineering, changchun, JiLin, China
Zhenyu Song
Affiliation:
[email protected], State Key Laboratory on Integrated Optoelectronics, changchun, JiLin, China
Menglong Cong
Affiliation:
[email protected], State Key Laboratory on Integrated Optoelectronics, changchun, JiLin, China
Yiding Wang
Affiliation:
[email protected], State Key Laboratory on Integrated Optoelectronics, changchun, China
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Abstract

Titanium doped indium oxide (TIO) thin films were deposited on glass substrate by DC sputtering with different O2/Ar gas ratios at 330 °C. The effects of sputtering on the structural, morphologic, optical and electrical characteristics of TIO thin films were investigated by XRD, Hall measurement and optical transmission spectroscopy. The deposited films exhibited polycrystalline in the preferred (222) orientation, with higher mean grain size and lower resistivity 3.37 ×10-4Ω·cm at O2/Ar ratio of 1/10. The average optical transmittance of the films is over 90%, and the transmittance has no evident change with changing O2/Ar ratio.

Keywords

thin filmtransparent conductorTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-21
Copyright
Copyright © Materials Research Society 2010

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