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Influence of Laser Annealing on Hydrogen Bonding in Disordered Silicon Thin Films

Published online by Cambridge University Press:  01 February 2011

N. H. Nickel  and
K. Brendel
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin Kekuléstr. 5, D-12489Berlin, Germany.
K. Brendel
Affiliation:
Hahn-Meitner-Institut Berlin Kekuléstr. 5, D-12489Berlin, Germany.
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Abstract

The influence of laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) on H bonding is investigated. Depending on the deposition temperature the amorphous starting material contains a H concentration of up to 44 at.%. Laser crystallization lowers the H content significantly. Fully crystallized poly-Si contains H concentrations of up to 17 at.%. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen effusion measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A16.6
Copyright
Copyright © Materials Research Society 2003

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References

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