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Influence of Ion Energy in Plasma Deposition of a-Sio2 Films

Published online by Cambridge University Press:  22 February 2011

L. Vallier ,
O. Joubert ,
R. Burke ,
F. Ferrieu  and
R. A. B. Devine
L. Vallier
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
O. Joubert
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
R. Burke
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
F. Ferrieu
Affiliation:
France Télécom, Centre National d'Etudes des Telecommunications, BP 98, 38243 Meylan Cedex, France
R. A. B. Devine
Affiliation:
France Télécom, Centre National d'Etudes des Telecommunications, BP 98, 38243 Meylan Cedex, France
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Abstract

Silicon dioxide films have been deposited using a microwave plasma of (SiH4 + O2) excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was (O2: SiH4) = 7 and no intentional substrate heating was used. The effect of ion energy during deposition, in the 10 — 150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate and electrical measurements. It is found that for an ion energy > 50 eV, many of the film characteristics are close to those of thermal SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 193
Copyright
Copyright © Materials Research Society 1993

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References

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