Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-07T21:20:10.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Ion Bombardment on the Nucleation and Growth of Plasna Deposited Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

A. M. Antoine  and
B. Drevillon
A. M. Antoine
Affiliation:
Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique, 91128 - PALAISEAU (France)
B. Drevillon
Affiliation:
Equipe Synthèse de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique, 91128 - PALAISEAU (France)
Get access

Abstract

Real-time spectroscopic phase modulated ellipsometry is used to study the influence of ion bombardment on the growth of plasma deposited amorphous silicon (a-Si:H). The influence of the relative ion flux impinging on the substrate is discussed by comparing a-Si:H films deposited in RF and multipole discharges. A nucleation process is observed in the early stage of the growth of a-Si:H deposited on chromium substrates. When the ion bombardment is strong (multipole plasma) a coalescence of the island structure is observed leading to the formation of a high density film with a smooth interface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 333
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Knights, J.C., The Physics of Hydrogenated Amorphous Silicon, Vol. I, Joanopoulos, J.D. and Lucovsky, J. ed., Springer Verlag, Berlin p.6 (1984).Google Scholar
[2] Drevillon, B., Thin Solid Films 130, 165 (1985).Google Scholar
[3] Drevillon, B., Huc, J. and Boussarssar, N., J. of Non Cryst. Solids 59–60, 735 (1983).Google Scholar
[4] Antoine, A.M., Drevillon, B. and Cabarrocas, P. Roca i, J. of Non Cryst. Solids 77–78, 769 (1985).Google Scholar
[5] Cabarrocas, P. Roca i, Antoine, A.M., Drevillon, B. and Schmitt, J.P.M., 7 th International Symposium on Plasma Chemistry Proceedings (Eindhoven 1985), Ed. by Timmermann, C.J. p. 136.Google Scholar
[6] Drevillon, B., Perrin, J., Siefert, J.M., Huc, J., Lloret, A., Rosny, G. de, and Schmitit, J.P.M., Appl. Phys. Lett. 42, 801 (1983).CrossRefGoogle Scholar
[7] Antoine, A.M., Drevillon, B. and Cabarrocas, P. Roca i J. of Appl. Phys. (1987), in press.Google Scholar
[8] Drevillon, B., Perrin, J., Marbot, R., Violet, A. and Dalby, J.L., Rev. Sci. Instr. 53, 969 (1982).CrossRefGoogle Scholar
[9] Antoine, A.M. and Drevillun, B., Proceedings of the 1 8 th International Conference on the Physics of Semiconductors (Stockholm, 1986), in press.Google Scholar
[10] Drevillon, B. and Vaillant, F., Thin Solid Films 124, 217 (1985).Google Scholar
[11] Aspnes, D.E., Stutdna, A.A. and Kinsborn, E., Phys. Rev. B29, 768 (1984).Google Scholar
[12] Aspnes, D.E., Thin Solid Films, 89, 249 (1982).Google Scholar
[13] Theeten, J.B., Surf. Sci. 96, 275 (1980).Google Scholar