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Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon

Published online by Cambridge University Press:  17 March 2011

Mark E. Law ,
Michelle D. Griglione  and
Misty Northridge
Mark E. Law
Affiliation:
Department of Electrical and Computer Engineering, University of FloridaGainesville, FL 32611-6130, U.S.A
Michelle D. Griglione
Affiliation:
Department of Electrical and Computer Engineering, University of FloridaGainesville, FL 32611-6130, U.S.A
Misty Northridge
Affiliation:
Department of Electrical and Computer Engineering, University of FloridaGainesville, FL 32611-6130, U.S.A
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Abstract

Carbon is a native impurity in Si which is known to trap self-interstitials and decrease their diffusivity. Carbon has also been observed to decrease B transient enhanced diffusion (TED) in Si through these interstitial interactions. Recently it has been proposed that vacancies must also be considered when accounting for the reduction of B TED. We have incorporated both the kick-out mechanism and the Frank-Turnbull (F-T) mechanism in simulations of interstitial diffusion and carbon diffusion, as well as experiments involving B diffusion in B doped superlattices (DSLs) with varying C concentration regions. We have used the binding energy between a carbon atom and a self-interstitial as a basis for the reaction rates for both mechanisms, and have found that an single energy of 2.25 eV best reproduces the results from several experiments, assuming equilibrium initial conditions for both mechanisms and ab-initio equilibrium values for all point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B7.4
Copyright
Copyright © Materials Research Society 2000

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