Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T02:39:10.117Z Has data issue: false hasContentIssue false
  • English
  • Français

Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

Published online by Cambridge University Press:  01 February 2011

Sang-Myeon Han ,
Young-Kwan Cha ,
Joong-Hyun Park ,
Sang-Geun Park ,
YoungSoo Park  and
Min-Koo Han
Sang-Myeon Han
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of, +82-2-880-7992, +82-2-871-7992
Young-Kwan Cha
Affiliation:
[email protected], Samsung Advanced Insitute of Technology, P.O. Box 111, Suwon, GyeongGi-Do, 440-600, Korea, Republic of
Joong-Hyun Park
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
Sang-Geun Park
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
YoungSoo Park
Affiliation:
[email protected], Samsung Advanced Insitute of Technology, P.O. Box 111, Suwon, GyeongGi-Do, 440-600, Korea, Republic of
Min-Koo Han
Affiliation:
[email protected], Seoul National University, School of Electrical Engineering, San 56-1, Shinlim-Dong, Gwanak-Gu, Seoul, 151-742, Korea, Seoul, Seoul, 151-742, Korea, Republic of
Get access

Abstract

The nc-Si films where the troublesome incubation layer was almost eliminated were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) under various dilution conditions. The nc-Si films were analyzed with cross-sectional high resolution transmission electron microscopy (HR-TEM) images. It was verified that the Si crystalline components formed and grew from the surface of buffer layer. The grain size of 20~50nm was measured. The absence of incubation layer in nc-Si film may be attributed mainly to ICP-CVD which generates remote plasma of high density, the role of hydrogen, and the dilution effect on the growth of crystalline. Our experimental results show that incubation-free nc-Si film deposited by ICP-CVD may be suitable for the active layer of bottom gate nc-Si TFTs as well as top gate nc-Si TFTs.

Keywords

Sifilmchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A08-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kono, N., et al, Mater. Res. Soc. Symp. Proc. 283, 629 (1993).Google Scholar
2. Jayatissa, A. H.,et al, Jpn. J. Appl. Phys., Part 1 35, 5687 (1996)Google Scholar
3. Lee, Czang-Ho,et al, Appl. Phys. Lett., Vol. 86, 222106 (2005)Google Scholar
4. Han, Sang-Myeon, et al, Tech. Digest. of International Electron Devices Meeting (IEDM) 2005, pp. 125–128 (2005)Google Scholar
5. Lee, J.W., Shimizu, K., Hanna, J., J. Non-Cryst. Solids, 338–340 (2004) 173–177 Google Scholar
6. Voz, C.,et al, J. Non-Cryst. Solids, 229–302 (2002) 1345.Google Scholar
7. Wang, K. C., Hwang, H. L., and Yew, T. R., Appl. Phys. Lett., 64 (8), 1024–1026 (1994)Google Scholar
8. Park, Young-Bae and Rhee, Shi-Woo, J. Appl. Phys., 90 (1), 217–221 (2001)Google Scholar
9. Cabarrocas, P. Roca i, et al, J. Appl. Phys., Vol. 86, 12, pp.7079–7081 (1999)Google Scholar
10. Goto, Masashi, et al, Jpn. J. Appl. Phys. Vol.36, pp.3714–3720 (1997)Google Scholar
11. Hopwood, J., Plasma Sources Sci. Technol. Vol. 1, pp.109–116 (1992)Google Scholar
12. Keller, J. H., Plasma Sources Sci. Technol. Vol. 5, pp. 166–172 (1996)Google Scholar
13. Kondo, Michio, et al, Thin Solid Films, 430, pp.130–134 (2003)Google Scholar
14. Hsieh, S. W., Chang, C. Y. and Hsu, S. C., J. Appl. Phys., 74(4), pp.2636–2648 (1993)Google Scholar
15. Srinivan, E.,et al, J. Vac. Sci. Technol., A 15(1), pp. 77–84 (1997)Google Scholar
16. Vossen, John L., Kern, Werner, “Thin Film Processes II”, Academic Press (1991)Google Scholar
17. Mukherjee, C.,et al, J. Vac. Sci. Technol., A 17(6), pp. 3202–3208 (1999)Google Scholar
18. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett., Vol. 35, 244 (1979)Google Scholar
19. Nomoto, K.,et al, Jpn. J. Appl. Phys., Vol. 29, 1372 (1990)Google Scholar
20. Veprek, S., Chem, J., Phys., Vol. 56, 952 (1972)Google Scholar
21. Otobe, M.,et al, Jpn. J. Appl. Phys., Vol. 31, 533 (1992)Google Scholar
22. Shibata, N.,et al, Mat. Res. Soc. Symp. Proc., Vol. 64, 1024 (1994)Google Scholar