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In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

Published online by Cambridge University Press:  10 February 2011

E. Chason ,
J. Yin ,
K. Tetz ,
R. Beresford ,
L. B. Freund ,
M. Ujue Gonzalez  and
J. A. Floro
E. Chason
Affiliation:
Brown University, Providence, RI 02912
J. Yin
Affiliation:
Brown University, Providence, RI 02912
K. Tetz
Affiliation:
Brown University, Providence, RI 02912
R. Beresford
Affiliation:
Brown University, Providence, RI 02912
L. B. Freund
Affiliation:
Brown University, Providence, RI 02912
M. Ujue Gonzalez
Affiliation:
Instituto de Microelectronica (CNM-CSIC), Madrid, Spain
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 167
Copyright
Copyright © Materials Research Society 2000

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References

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