Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T15:18:30.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Improving yields in bridging silicon nanowires with rational control of the bridge characteristics

Published online by Cambridge University Press:  05 August 2013

Jin Yong Oh  and
M. Saif Islam
Jin Yong Oh
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616 USA
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616 USA
Get access

Abstract

We present a practical technique for fabricating silicon nanowire bridges on pre-patterned Si electrodes arrays. Silicon nanowires, catalyzed by gold nanoparticles, were grown on silicon electrodes from HF treated Au colloid as well as on electrodes treated with poly-L-lysine. Negligible growth was observed on untreated substrates due to poor adhesion of gold nanoparticles to the hydrogen terminated Si surface. In contrast, the treatments significantly increased occurrence of silicon nanowire bridges, which can be attributed to improved deposition of gold nanoparticles on the surface. Deposition time and concentrations of colloids also affected the occurrence of SiNW bridges. These results indicate that our techniqute for fabricating nanowire bridge arrays will be useful for large-area nanowire applications.

Keywords

SinanostructureAu
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 111 - 116
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

Saif Islam, M., Sharma, S., Kamins, T. I., and Stanley Williams, R., “A novel interconnection technique for manufacturing nanowire devices, ” Applied Physics A, vol. 80, no. 6, pp. 1133–1140, 2005.CrossRefGoogle Scholar
He, R., Gao, D., Fan, R., Hochbaum, A. I., Carraro, C., Maboudian, R., and Yang, P., “Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication, ” Advanced Materials, vol. 17, no. 17, pp. 2098–2102, 2005.CrossRefGoogle Scholar
Chaudhry, A., Ramamurthi, V., Fong, E., and Islam, M. S., “Ultra-Low Contact Resistance of Epitaxially Interfaced Bridged Silicon Nanowires, ” Nano Letters, vol. 7, no. 6, pp. 1536–1541, 2007.CrossRefGoogle ScholarPubMed
Gao, P. X., Liu, J., Buchine, B. A., Weintraub, B., Wang, Z. L., and Lee, J. L., “Bridged ZnO nanowires across trenched electrodes, ” Applied Physics Letters, vol. 91, no. 14, 2007.CrossRefGoogle Scholar
He, R. R., and Yang, P. D., “Giant piezoresistance effect in silicon nanowires, ” Nature Nanotechnology, vol. 1, no. 1, pp. 42–46, 2006.CrossRefGoogle ScholarPubMed
Brittman, S., Gao, H. W., Garnett, E. C., and Yang, P. D., “Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated with an Octahedral Silver Nanocrystal, ” Nano Letters, vol. 11, no. 12, pp. 5189–5195, Dec, 2011.CrossRefGoogle Scholar
Yi, S. S., Girolami, G., Amano, J., Islam, M. S., Sharma, S., Kamins, T. I., and Kimukin, I., “InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition, ” Applied Physics Letters, vol. 89, no. 13, 2006.CrossRefGoogle Scholar
Chen, R. S., Wang, S. W., Lan, Z. H., Tsai, J. T., Wu, C. T., Chen, L. C., Chen, K. H., Huang, Y. S., and Chen, C. C., “On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity, ” Small, vol. 4, no. 7, pp. 925–9, 2008.CrossRefGoogle ScholarPubMed
Jung, T.-H., Kwon, S.-I., Park, J.-H., Lim, D.-G., Choi, Y.-J., and Park, J.-G., “SnO2 nanowires bridged across trenched electrodes and their gas-sensing characteristics, ” Applied Physics A, vol. 91, no. 4, pp. 707–710, 2008.CrossRefGoogle Scholar
Mason, A. D., Huang, C. C., Kondo, S., Koesdjojo, M. T., Tennico, Y. H., Remcho, V. T., and Conley, J. F., “Synthesis, functionalization, and environmental stabilization of ZnO nanobridge transducers for gas and liquid-phase sensing, ” Sensors and Actuators B-Chemical, vol. 155, no. 1, pp. 245–252, 2011.CrossRefGoogle Scholar
Islam, M. S., Sharma, S., Kamins, T. I., and Williams, R. S., “Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces, ” Nanotechnology, vol. 15, no. 5, pp. L5–L8, 2004.CrossRefGoogle Scholar
Hochbaum, A. I., Fan, R., He, R., and Yang, P., “Controlled Growth of Si Nanowire Arrays for Device Integration, ” Nano Letters, vol. 5, no. 3, pp. 457–460, 2005.CrossRefGoogle ScholarPubMed
Rance, G. A., Marsh, D. H., Bourne, S. J., Reade, T. J., and Khlobystov, A. N., “van der Waals Interactions between Nanotubes and Nanoparticles for Controlled Assembly of Composite Nanostructures, ” ACS Nano, vol. 4, no. 8, pp. 4920–4928, 2010.CrossRefGoogle Scholar
Woodruff, J. H., Ratchford, J. B., Goldthorpe, I. A., McIntyre, P. C., and Chidsey, , “Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal, ” Nano Letters, vol. 7, no. 6, pp. 1637–1642, 2007.CrossRefGoogle ScholarPubMed
O'Reilly, A. J., Francis, C., and Quitoriano, N. J., “Gold nanoparticle deposition on Si by destabilising gold colloid with HF, ” J Colloid Interface Sci, vol. 370, no. 1, pp. 46–50, 2012.CrossRefGoogle Scholar