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Improved Electromigration Lifetime for Copper Interconnects using Tantalum Implant

Published online by Cambridge University Press:  01 February 2011

Jeff Gambino ,
Timothy D. Sullivan ,
Jason Gill ,
Fen Chen ,
Steve Mongeon ,
Edward D. Adams ,
Jay Burnham ,
Phil Pokrinchak  and
Kenneth P. Rodbell
Jeff Gambino
Affiliation:
[email protected], IBM, Z/975A, 1000 River Street, Essex Junction, VT, 05494, United States, 802-769-0433
Timothy D. Sullivan
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Jason Gill
Affiliation:
[email protected], IBM Microelectronics, Hopewell Junction, NY, 12533, United States
Fen Chen
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Steve Mongeon
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Edward D. Adams
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Jay Burnham
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Phil Pokrinchak
Affiliation:
[email protected], IBM Microelectronics, Essex Junction, VT, 05452, United States
Kenneth P. Rodbell
Affiliation:
[email protected], IBM Thomas J. Watson Research Center, Yorktown Heights, NY, 10598, United States
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Abstract

In this study, a novel method is explored for improving the electromigration lifetime of Cu wires, using Ta implantation into Cu. For high implant doses (2E15 cm−2), the electromigration lifetime is improved by over 5X using this method. An increase in lifetime is achieved, even for an average surface concentration of Ta on the order of 0.1 atm%. We propose that the improvement in electromigration lifetime is due to the reduction of defects at the SiN/Cu interface due to the presence of Ta. The line-to-line leakage at high voltages (> 5V) increases with the Ta implant, with higher leakage at higher Ta concentrations, so the Ta dose must be limited to avoid excessive leakage.

Keywords

electromigrationCuTa
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B06-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Edelstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motsiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R., Su, L., Luce, S., Slattery, J., IEDM Proc., 1997, p. 773.Google Scholar
2 Moon, P., Dubin, V., Johnston, S., Leu, J., Raol, K., Wu, C., IEDM Proc., 2003, p. 841.Google Scholar
3 Hu, C.-K., Gignac, L., Liniger, E., Herbst, B., Rath, D.L., Chen, S.T., Kaldor, S., Simon, A., Tseng, W.-T., Appl. Phys. Lett., 83, 869 (2003).Google Scholar
4 Lane, M.W., Liniger, E.G., Lloyd, J.R., J. Appl. Phys., 93, 1417 (2003).Google Scholar
5 Gosset, L.G., Chhun, S., Beling, W., Vanypre, Th., Farcy, A., Arnal, V., Mellier, M., Flake, J., Michaelson, L., Brun, Ph., Ollier, E., Ney, D., Girault, V., Hopstaken, M., Jullian, S., Kim, K., Jiang, Z.X., Broussous, L., Humbert, A., Fang, H., Van, S., Shanmugasundram, A., Torres, J., Proc. AMC 2005, Ed. Brongersma, S.H., Taylor, T.C., Tsujimura, M., Masu, K., MRS 2006, p. 587.Google Scholar
6 Gambino, J., Wynne, J., Gill, J., Mongeon, S., Meatyard, D., Lee, B., Bamnolker, H., Hall, L., Li, N., Hernandez, M., Little, P., Hamed, M., Ivanov, I., Gan, C.L., to be published in Microelec. Eng., 2006.Google Scholar
7 Stamper, A.K., Adams, C., Chen, X., Christiansen, C., Cooney, E., Cote, W., Gambino, J., Gill, J., Luce, S., McDevitt, T., Porth, B., Spooner, T., Winslow, A., Wistrom, R., AMC 2002 Proc., MRS, 2003, p. 485.Google Scholar
8http://www.srim.org/Google Scholar
9 Li, B., Gill, J., Christiansen, C.J., Sullivan, T.D., McLaughlin, P.S., IRPS Proc., 2005, p. 24.Google Scholar
10 Chen, F., Bravo, O., Chanda, K., McLaughlin, P., Sullivan, T., Gill, J., Lloyd, J., Kontra, R., Aitken, J., IRPS Proc., 2006, p. 46.Google Scholar
11 Chen, F., Li, B., Lee, T., Christiansen, C., Gill, J., Angyal, M., Shinosky, M., Burke, C., Hasting, W., Austin, R., Sullivan, T., Badami, D., Aitken, J., IPFA Proc., 2006, p. 97.Google Scholar
12 Gambino, J., Sullivan, T.D., Chen, F., Gill, J., Mongeon, S., Adams, E., Burnham, J., Rodbell, K., IITC Proc., 2007.Google Scholar