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Implant Enhanced Diffusion of Boron in Silicon Germanium

Published online by Cambridge University Press:  15 February 2011

Wingra T. C. Fang ,
Peter B. Griffin  and
James D. Plummer
Wingra T. C. Fang
Affiliation:
Stanford University, Department of Electrical Engineering, Stanford, CA 94305
Peter B. Griffin
Affiliation:
Stanford University, Department of Electrical Engineering, Stanford, CA 94305
James D. Plummer
Affiliation:
Stanford University, Department of Electrical Engineering, Stanford, CA 94305
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Abstract

In this work, the inert and implant enhanced diffusion of boron in silicon germanium (SiGe) was studied by means of a boron box-shaped profile grown inside Si0.905 Ge0.095 or Si0.785Ge0.22 layers. The SiGe layers were capped with silicon for stability and to ensure no lattice damage in the SiGe layers during the implant. Assuming boron moves by interstitial-mediated diffusion in SiGe, the results suggest that decreases in the mobile boron diffusivity, not decreases in interstitial concentration, cause much of the decrease in average boron diffusivity with increasing Ge fraction. Implant enhancements decreased as the germanium percentages increased, possibly indicating higher interstitial concentrations in SiGe than in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 379
Copyright
Copyright © Materials Research Society 1995

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References

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