Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T13:49:34.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Impedance Spectroscopy and Hall Measurements on CdTe Thin Polycrystalline Films

Published online by Cambridge University Press:  21 March 2011

A.S. Gilmore ,
V. Kaydanov ,
T.R. Ohno ,
D. Grecu  and
D. Rose
A.S. Gilmore
Affiliation:
Colorado School of Mines, Dept. of Physics, Golden, CO 80401, U.S.A.
V. Kaydanov
Affiliation:
Colorado School of Mines, Dept. of Physics, Golden, CO 80401, U.S.A.
T.R. Ohno
Affiliation:
Colorado School of Mines, Dept. of Physics, Golden, CO 80401, U.S.A.
D. Grecu
Affiliation:
First Solar, LLC, 12900 Eckel Junction Road, Perrysburg, OH 43551, U.S.A.
D. Rose
Affiliation:
First Solar, LLC, 12900 Eckel Junction Road, Perrysburg, OH 43551, U.S.A.
Get access

Abstract

Measurements of film impedance in a wide frequency range (impedance spectroscopy, IS) were used to evaluate the grain boundary (GB) and the bulk material (B) resistance. Undoped films demonstrated very low carrier concentration and negligible GB resistance, both due to depletion of the bulk material by the GB deep states. Doping the film with Cu led to a significant increase in the GB resistance, in addition to the expected increase in carrier concentration. Illumination of doped films reduced GB resistance by orders of magnitude. This effect was used for the analysis of Hall concentration and Hall mobility data, aimed at exclusion of GB influence on measured parameters, and was used to determine the carrier concentration and mobility in the grain bulk. Hall studies on undoped films under illumination were also used to estimate the lifetime of the photogenerated carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thorpe, T.P. Jr, Fahrenbruch, A.L., and Bube, R.H., J. Appl. Phys. 60, 3622 (1986).Google Scholar
2. Gilmore, A.S., Kaydanov, V., Laor, U., Gupta, A., Ohno, T.R., McCandless, B., NCPV Progr. Review Meeting 2000, April 2000, Denver, CO, p.259.Google Scholar
3. Woods, L.M., Levi, D.H., Kaydanov, V., Robinson, G.Y., and Ahrenkiel, R.K., Proc. of the 2nd World Conf. on PV Solar Energy Conversion, July 1998, Vienna, Austria, p.1043.Google Scholar
4. Blount, G.H., Bube, R.H., and Robinson, A.L., J. Appl. Phys. 41, 2190 (1970).Google Scholar
5. Lyubomirsky, I., Rabinal, M.K., and Cahen, D., J. Appl. Phys. 81, 6684 (1997).Google Scholar
6. Zanio, K. “Cadmium Telluride” (Ser. Semiconductors and Semimetals, vol.13), Acad. Press, New York-San Francisco-London, 1978, (see p.110).Google Scholar