Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T15:45:38.605Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  02 May 2013

Nitin Goyal  and
Tor A. Fjeldly
Nitin Goyal
Affiliation:
Department of Electronics and Communication, Norwegian University of Science and Technology, Trondheim, Norway
Tor A. Fjeldly
Affiliation:
Department of Electronics and Communication, Norwegian University of Science and Technology, Trondheim, Norway
Get access

Abstract

A physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

Keywords

III-Vbarrier layernitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 335 - 340
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., and Hilsenbeck, J., “ Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, J. Appl. Phys. 85, 3222 (1999)CrossRefGoogle Scholar
Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., and Mishra, U. K., “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors”, Appl. Phys. Lett. 77, 250 (2000)CrossRefGoogle Scholar
Jogai, B., “Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors”, J. Appl. Phys. 93, 1631 (2003)CrossRefGoogle Scholar
Higashiwaki, Masataka, Chowdhury, Srabanti, Miao, Mao-Sheng, Swenson, Brian L., Van de Walle, Chris G., and Mishra, Umesh K., “Distribution of donor states on etched surface of AlGaN/GaN heterostructures”, J. Appl. Phys. 108, 063719 (2010)CrossRefGoogle Scholar
Koley, G. and Spencer, M. G., “On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface”, Appl. Phys. Lett. 86, 042107 (2005)CrossRefGoogle Scholar
Gordon, Luke, Miao, Mao-Sheng, Chowdhury, Srabanti, Higashiwaki, Masataka, Mishra, Umesh K and Van de Walle, Chris G, “Distributed surfaces donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions”. J. Phys. D: Appl. Phys. 43 505501 CrossRefGoogle Scholar
Goyal, N., Iniguez, B., and Fjeldly, T. A., “Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures” Appl. Phys. Lett. 101, 103505 (2012).CrossRefGoogle Scholar
Goyal, N., Fjeldly, T. A., “Effects of Strain Relaxation on Bare Surface Barrier Height and Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures” Journal of Applied Physics,113, 014505 (2013).CrossRefGoogle Scholar
Mohammad, S. Noor, “Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN, ” J. Appl. Phys. 95, 7940 (2004)CrossRefGoogle Scholar
Cowley, A. M. and Sze, S. M., “Surface States and Barrier Height of Metal-Semiconductor Systems”, J. Appl. Phys. 36, 3212 (1965)CrossRefGoogle Scholar
Shin, Jong Hoon, Jo, Young Je, Kim, Kwang-Choong, Jang, T., and Kim, Kyu Sang, “Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electro reflectance spectroscopy”, Appl. Phys. Lett. 100, 111908 (2012)CrossRefGoogle Scholar
Bradley, S. T., Goss, S. H., Hwang, J., Schaff, W. J., and Brillson, L. J., “Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height, ” Appl. Phys. Lett. 85, 1368 (2004)CrossRefGoogle Scholar
Yu, L. S., Xing, Q. J., Qiao, D., Lau, S. S., Boutros, K. S., and Redwing, J. M., “Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure, ” Appl. Phys. Lett. 73, 3917 (1998)CrossRefGoogle Scholar
Bradley, S. T., Goss, S. H., Hwang, J., Schaff, W. J., and Brillson, L. J., “Pre-metallization processing effects on Schottky contacts to AlGaN/GaN heterostructures, ” J. Appl. Phys. 97, 084502 (2005)CrossRefGoogle Scholar
Yu, E. T., Dang, X. Z., Yu, L. S., Qiao, D., Asbeck, P. M., Lau, S. S., Sullivan, G. J., Boutros, K. S., and Redwing, J. M., “Schottky barrier engineering in III–V nitrides via the piezoelectric effect, ” Appl. Phys. Lett. 73, 1880 (1998)CrossRefGoogle Scholar