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Imaging Electron Transport across Grain Boundaries in an Integrated Electron and Atomic Force Microscopy Platform: Application to Polycrystalline Silicon Solar Cells

Published online by Cambridge University Press:  31 January 2011

Manuel J Romero ,
Fude Liu ,
Oliver Kunz ,
Johnson Wong ,
Chun-Sheng Jiang ,
Mowafak Al-Jassim  and
Armin G Aberle
Manuel J Romero
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Fude Liu
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Oliver Kunz
Affiliation:
[email protected], University of New South Wales, Sydney, New South Wales, Australia
Johnson Wong
Affiliation:
[email protected], University of New South Wales, Sydney, New South Wales, Australia
Chun-Sheng Jiang
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Mowafak Al-Jassim
Affiliation:
[email protected], National Renewable Energy Laboratory, Golden, Colorado, United States
Armin G Aberle
Affiliation:
[email protected], University of New South Wales, Sydney, New South Wales, Australia
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Abstract

We have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.

Keywords

photovoltaicscanning probe microscopy (SPM)grain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A15-03
Copyright
Copyright © Materials Research Society 2009

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