Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T01:53:38.115Z Has data issue: false hasContentIssue false
  • English
  • Français

III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High Power RF Transistors

Published online by Cambridge University Press:  01 February 2011

Adam Saxler ,
Edward L. Hutchins ,
Jason Jenny  and
Austin Blew
Adam Saxler
Affiliation:
[email protected], Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, United States
Edward L. Hutchins
Affiliation:
[email protected], Cree, Inc.
Jason Jenny
Affiliation:
[email protected], Cree, Inc.
Austin Blew
Affiliation:
[email protected], Lehighton Electronics, Inc.
Get access

Abstract

Metalorganic chemical vapor deposition was employed to deposit high quality, highly uniform III-Nitride transistor structures on 100 mm diameter semi-insulating 4H-SiC substrates. Electron mobility was over 2000 cm2/Vs at room temperature. Sheet resistivity uniformity was as low as 0.75%. Typical standard deviations were about 1% in most properties including sheet resistivity, carrier concentration, mobility, and AlGaN composition. Additionally, wafers maintained their flat shape after deposition of these structures. Wafer bow and warp were typically less than 20 μm for optimized structures and <5 μm for the best wafers.

Keywords

Hall effectsemiconductingvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF15-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., and Parikh, P., IEEE Elec. Dev. Lett. 25, 117 (2004).CrossRefGoogle Scholar
2 www.cree.com Google Scholar