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Identification of Chemical Growth Mechanisms in Amorphous Semiconductors

Published online by Cambridge University Press:  26 February 2011

Jeffrey A. Reimer ,
Michael J. Mccarthy ,
Karen K. Gleason  and
Philip W. Morrison Jr
Jeffrey A. Reimer
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
Michael J. Mccarthy
Affiliation:
Department of Food Science and Technology, University of California, Davis, California 95616
Karen K. Gleason
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
Philip W. Morrison Jr
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, California 94720-9989
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Abstract

Experimental and computational results for three classes of experiments are reported. NMR measurements of phosphorus in amorphous hydrogenated silicon indicate that bonding rearrangements in bulk films are possible. Monte Carlo simulations of film growth demonstrate that surface diffusion is the dominant physical phenomenon responsible for the bulk hydrogen content of a-Si:H films. Finally, the gas phase chemistry of silane, as elucidated by our new “diesel” reactor, is considerably more complicated than many authors assume in models for thin films grown from silane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 209
Copyright
Copyright © Materials Research Society 1987

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