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The Hysteresis Analysis of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode

Published online by Cambridge University Press:  01 February 2011

Jae-Hoon Lee ,
Bong-Hyun You ,
Kwang-Sub Shin  and
Min-Koo Han
Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:[email protected]
Bong-Hyun You
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:[email protected]
Kwang-Sub Shin
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:[email protected]
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail:[email protected]
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Abstract

An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is reported. The different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer (HP4156B) has also been controlled to investigate the effect between the detrapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A22.5
Copyright
Copyright © Materials Research Society 2005

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References

[1] Stewart, M., “Polysilicon TFT Technology for Active Matrix OLED Displays.” IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845–851, 2001.10.1109/16.918227Google Scholar
[2] Nathan, A., “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of solid-state circuits, vol.39, pp.1477–1486, 2004.10.1109/JSSC.2004.829373Google Scholar
[3] Kuo, Yue, Thin film transistors Materials and Processes, Kluwer academic publishers (2004), p.83.10.1007/978-1-4615-0397-2Google Scholar
[4] Neamen, D.A., Semiconductor physics and devices, McGraw-Hill (2003), p.492.Google Scholar