Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T14:29:35.054Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrothermal Fabrication of Barium Strontium Titanate Ceramics for High-Frequency Wireless Communication Networks

Published online by Cambridge University Press:  21 March 2011

K. Zelonka ,
M. Sayer ,
H. Hammad  and
A.P. Freundorfer
K. Zelonka
Affiliation:
Department of Physics, Queen's University, Kingston, ON, K7L 3N6, CANADA
M. Sayer
Affiliation:
Department of Physics, Queen's University, Kingston, ON, K7L 3N6, CANADA
H. Hammad
Affiliation:
Department of Electrical Engineering, Queen's University, Kingston, ON, K7L 3N6, CANADA
A.P. Freundorfer
Affiliation:
Department of Electrical Engineering, Queen's University, Kingston, ON, K7L 3N6, CANADA
Get access

Abstract

Thin films of barium strontium titanate are fabricated on alumina by a hydrothermal method. Crystalline films are produced at temperatures as low as 60°C. The relative dielectric permittivity of films with the composition Ba0.15Sr0.85TiO3 lies in the range between 150 and 220 for low frequencies (100 kHz to 1 MHz), decreasing with frequency. The loss tangent for the films increases from 0.05 to 0.15 over the same frequency range. Relative concentrations of barium and strontium in the film are controllable through the hydrothermal reaction conditions. The surface microstructure of the films is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC12.13.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baumert, B.A., Chang, L-H., Matsuda, A.T., and Tracy, C.J., J. Mat. Res. 13, 197 (1998)10.1557/JMR.1998.0026Google Scholar
2. Zhang, L., Zhong, W.L., Wang, C.L., Zhang, P.L., Wang, Y.G., Phys. Stat. Sol. (a) 168, 543 (1998)10.1002/(SICI)1521-396X(199808)168:2<543::AID-PSSA543>3.0.CO;2-J3.0.CO;2-J>Google Scholar
3. Cho, C., Shi, E, Jang, M., Jeong, S., and Kim, S., Jpn. J. Appl. Phys. 33, 4984 (1994)10.1143/JJAP.33.4984Google Scholar