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Hydrogen-related defects in bulk ZnO

Published online by Cambridge University Press:  31 January 2011

Matthew D McCluskey ,
Slade J. Jokela  and
Marianne C. Tarun
Matthew D McCluskey
Affiliation:
[email protected], Washington State University, Pullman, Washington, United States
Slade J. Jokela
Affiliation:
[email protected], Washington State University, Pullman, Washington, United States
Marianne C. Tarun
Affiliation:
[email protected], Washington State University, Pullman, Washington, United States
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Abstract

Zinc oxide (ZnO) has attracted resurgent interest as an active material for energy-efficient lighting applications. An optically transparent crystal, ZnO emits light in the blue-to-UV region of the spectrum. The efficiency of the emission is higher than more “conventional” materials such as GaN, making ZnO a strong candidate for solid-state white lighting. Despite its advantages, however, ZnO suffers from a major drawback: as grown, it contains a relatively high level of donors. These unwanted defects compensate acceptors or donate free electrons to the conduction band, thereby keeping the Fermi level in the upper half of the band gap. This paper reviews recent work on hydrogen donors and nitrogen-hydrogen complexes in ZnO.

Keywords

II-VIhydrogenationinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O07-07
Copyright
Copyright © Materials Research Society 2009

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