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Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

Published online by Cambridge University Press:  26 February 2011

Sathya Balasubramanian  and
Vikram Kumar
Sathya Balasubramanian
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore -560 012,
Vikram Kumar
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
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Abstract

The effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 453
Copyright
Copyright © Materials Research Society 1995

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