Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-30T02:33:39.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Neutralization of Chalcogen double donor Centers in Single-Crystal Silicon

Published online by Cambridge University Press:  26 February 2011

Gerhard Pensl ,
G. Roos ,
P. Stolz ,
N. M. Johnson  and
C. Holm
Gerhard Pensl
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
G. Roos
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
P. Stolz
Affiliation:
Pensl, Roos, Stolz University of Erlangen, Institute of Applied Physics, Glückstraße 9, D-8520 Erlangen, Federal Republic of Germany
N. M. Johnson
Affiliation:
Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304
C. Holm
Affiliation:
Holm Heliotronic GmbH, P.O.Box 1129, D-8263 Burghausen, Federal Republic of Germany
Get access

Abstract

Chalcogen (S,Se,Te) -doped silicon samples were hydrogen neutralized by different passivation techniques. The electrically active double-donor densities were determined by DLTS measurements. DLTS spectra reveal that both donor levels recover simultaneously. The activation energy for re-activation of neutralized isolated and pure pair sulphur double-donors is Ea(So/+) = 2,13 ± 0,15 eV and Ea(S2o/+) = 2,1 ± 0,15 eV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 241
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Pensl, G., Roos, G., Holm, C., Wagner, P., Materials Science Forum 10–12, pp.911–916 (1986) Trans Tech Publications Ltd., Switzerland,-ed. von Bardeleben, H.J.Google Scholar
2.Holm, C., Ph.D.Thesis, 1981, MünchenGoogle Scholar
3.Johnson, N.M., Biegelsen, D.K., Moyer, M.D., Appl.Phys.Lett. 38, 995 (1981)Google Scholar
4.Hölzlein, K., Pensl, G., Schulz, M., Stolz, P., Rev.Sci.Instrum. 57, 1373 (1986)Google Scholar
5.Johnson, N.M., Herring, C., Chadi, D.J., 18th Intern.Conf. on the Phys. of Semiconductors, pp. 991–995 (1987), World Sci.Publ., Singapore, ed.Engstrom, O.Google Scholar
6.Johnson, N.M., Ponce, F.A., Street, R.A., Nemanich, R.J., Phys.Rev. B 35, 4166 (1987)Google Scholar
7.Johnson, N.M. and Hahn, S.K., Appl.Phys.Lett. 48, 709 (1986)Google Scholar
8.Hölzlein, K., Pensl, G., Schulz, M., and Johnson, N.M., Appl.Phys.Lett. 48, 916 (1986)Google Scholar
9.Johnson, N.M., Herring, C., and Chadi, D.J., Phys.Rev.Lett. 56, 769 (1986)Google Scholar
10.Pensl, G., Roos, G., Holm, C., Sirtl, E., and Johnson, N.M., Appl.Phys.Lett. 51, 451 (1987)Google Scholar
11.Johnson, N.M. and Herring, C., these proceedings.Google Scholar