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Hydrogen Generation for 500 hours by Photoelectrolysis of Water using GaN

Published online by Cambridge University Press:  11 July 2012

W. Ohara
Affiliation:
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
D. Uchida
Affiliation:
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
T. Hayashi
Affiliation:
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
M. Deura
Affiliation:
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
K. Ohkawa
Affiliation:
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Abstract

We confirmed that GaN photocatalyst with NiO cocatalyst (GaN-NiO) continuously produced hydrogen from water for 500 hours without any extra bias. The GaN-NiO photocatalyst was hardly etched and 184-mL hydrogen gas was produced from the electric charge of 1612 coulombs, the Faradic efficiency of which was 89.2%. The conversion efficiency from incident light energy to hydrogen chemical energy was 0.98% in average for 500 h. The incident photon-to-current conversion efficiency (IPCE) was 50% at 300 nm and 35% at 350 nm after the experiment, which was much higher than those of other semiconductor-based photocatalysts.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Fujishima, A. and Honda, K., Nature 238, 37 (1972).Google Scholar
2. Jing, D., Guo, L., Zhao, L., Zhang, X., Liu, H., Li, M., Shen, S., Liu, G., Hu, X., Zhang, X., Zhang, K., Ma, L., Guo, P., Int. J. Hydrogen Energy 35, 7087 (2010).Google Scholar
3. Kraeutler, B. and Bard, A. J., J. Am. Cham. Soc. 100, 4317 (1978).Google Scholar
4. Memming, R., Semiconductor Electrochemistry, WILEY-VCH, p. 105 (2001).Google Scholar
5. Kocha, S. S., Peterson, M. W., Arent, D. J., Redwing, J. M., Tischler, M. A., Turner, J. A., J. Electrochem. Soc. 142, L236 (1995).Google Scholar
6. Ono, M., Fujii, K., Ito, T., Iwaki, Y., Yao, T., Ohkawa, K., J. Chem. Phys. 126, 054708 (2007).Google Scholar
7. Fujii, K. and Ohkawa, K., Jpn. J. Appl. Phys. 44, L909 (2005).Google Scholar
8. Fujii, K., Kusakabe, K., Ohkawa, K., Jpn. J. Appl. Phys. 44, 7433 (2005).Google Scholar
9. Fujii, K. and Ohkawa, K., J. Electrochem. Soc. 153, A468 (2006).Google Scholar
10. Fujii, K. and Ohkawa, K., Phys. Status Soldi C 3, 2270 (2006).Google Scholar
11. Fujii, K., Ono, M., Ito, T., Ohkawa, K., Mater. Res. Soc. Sym. Proc. 0885-A11-04.1 (2006).Google Scholar
12. Fujii, K., Ito, T., Ono, M., Iwaki, Y., Yao, T., Ohkawa, K., Phys. Status Solidi C 4, 2650 (2007).Google Scholar
13. Fujii, K., Iwaki, Y., Masui, H., Baker, T. J.. Iza, M., Sato, H., Keading, J., Yao, T., Speck, J. S., DenBaars, S. P., Nakamura, S., Ohkawa, K., Jpn. J. Appl. Phys. 46, 6573 (2007).Google Scholar
14. Fujii, K., Karasawa, T., Ohkawa, K., Jpn. J. Appl. Phys. 44, 543 (2005).Google Scholar
15. Sano, F., Koyama, T., Sorimachi, M., Hirako, A., Ohkawa, K., The 8th Int’l Conf. on Nitride Semiconductors, p. 18 (2009).Google Scholar
16. Ito, K., Ikeda, S., Yoshida, M., Ohta, S., and Iida, T., Bull. Chem. Soc. Jpn. 57, 583 (1984).Google Scholar
17. Hara, M., Kondo, T., Komoda, M., Ikeda, S., Shinohara, K., Tanaka, A., Kondo, J. N., Domen, K., Chem. Commun. 10, 1039 (1998).Google Scholar
18. Kato, H., Asakura, K., Kudo, A., J. Am. Chem. Soc. 125, 3082 (2003).Google Scholar
19. Kato, H. and Kudo, A., J. Phys. Chem. B 105, 4285 (2001).Google Scholar
20. Sayama, K. and Arakawa, H., Catal. Today 28, 175 (1997).Google Scholar
21. Ko, Y. G. and Lee, W. Y., Catal. Lett. 83, 157 (2002).Google Scholar
22. Maeda, K., Teramura, K., Domen, K., J. Catal. 254, 198 (2008).Google Scholar