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Hrteminvestigation of 90° Domain Configureuration and P-E Hysteresis Loop of Epitaxial PZT Multilayered Thin Films

Published online by Cambridge University Press:  11 February 2011

Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mizutani
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Nobuyasu Mizutani
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
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Abstract

Multi-layered epitaxial Pb(Zrx,Ti1-x)O3 (PZT) films of x=0.2–0.5 were deposited on La0.5Sr0.5CoO3-x (LSCO)/ (001)STO and LSCO/CeO2/YSZ/(001)Si substrates with buffer layers. It was investigated how the 90° domain structure and the P-E hysteresis character depend on the difference of the thermal expansion coefficient by changing the Zr/Ti composition and the substrates, using HRTEM and XRD methods. XTEM analysis showed that usual lamella configuration of 90° domains of 8–30nm in width penetrated the columnar grain and the PZT layer in the PZT stacked film of Zr/Ti=20/80, 30/70, 40/60. On the other hand, the close-packed 90° domains of 4–5nm in width existed in a epitaxial columnar grain in the PZT50/50 stacked film. The P-E hysteresis loops of PZT20/80 stacked films deposited on STO and Si substrates show the remanent polarization of 2Pr=136μC/cm2, 2Pr=80μC/cm2, respectively. On the other hands, those of PZT50/50 stacked films deposited on STO and Si substrates show the polarization of 2Pr=125μC/cm2, 2Pr=36μC/cm2, respectively. Thus, the P-E hysteresis loop of PZT50/50 has remarkable difference of 2Pr between the substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U5.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Araujo, C.A., MacmMillan, L.D., Melnick, B.M., Cuchiaro, J.D., and Scott, J.F., Ferroelectrics, 104. 241 (1990)Google Scholar
[2] Johnes, R.E., Zu'rcher, P., Chou, P., Taylor, D.J., Lii, Y.T., Jiang, B., Maniar, P.D., and Gillespie, S.J., Microelectron. Eng., 29, 3 (1995)Google Scholar
[3] Suzuki, M., J. Ceram. Soc. Japan, 103, 1099 (1995)Google Scholar
[4] Ganpule, C.S., Nagarajan, V., Li, H., Ogale, A.S., Martinez, A.D., Ogale, S.B., Aggarwal, S.A., Williams, E., Wolf, P.De., and Ramesh, R., Integrated Ferroelectrics, 32, 199 (2001)Google Scholar
[5] Emelyanov, A.Yu. and Pertsev, N.A., Iintegrated Ferroelectrics, 32, 343 (2001)Google Scholar
[6] Speck, J.S., Seifert, A., Pompe, W., and Ramesh, R., J. Appl. Phys, 76, 477 (1994)Google Scholar
[7] Alpay, S.P., Nagarajan, V., Vendersky, L.A., Vaudin, M.D., Aggarwal, S., Ramesh, R., and Roytburd, A.L., Appl. Phys., 85, 3271 (1999)Google Scholar
[8] Foster, C.M., Li, Z., Buckett, M., Miller, D., Baldo, P.M., Rehn, L.E., Bai, G.R., Guo, D., You, H., and Merkel, K.L., J. Appl. Phys., 78, 2607 (1995)Google Scholar
[9] Theis, C.D. and Schlom, D.G., J. Mater. Sci, 12, 1297 (1997)Google Scholar
[10] Novojilov, M.A., Kaul, A.R., Gorbrnoko, O.Y., Wahl, G., and Krause, U., Integrated Ferroelectrics, 33, 79 (2001)Google Scholar
[11] Tuttle, B.A., Voigt, J.A., Goodnow., D.C., Lamppa, D.L., Headley, T.J., Eatough, M.O., Zenner, G., Nasby, R.D., and Rodgers, S.M., J. Am. Ceram. Soc., 76, 1537–44 (1993)Google Scholar
[12] Sagalowicz, L., Pmuralt, , Hiboux, S., Maeder, T., Brooks, K., Kighelman, Z. and Setter, N., Mat. Res. Soc. Symp. Proc 596, Pittsburgh, PA, 265 (2000)Google Scholar
[13] Kim, J.H., Kim, Y., Chen, A.T‥, and Lange, F.F., J. Mater. Res‥, 16, 1739 (2001)Google Scholar
[14] Lee, J., Johnson, L., Safari, A., Ramesh, R., Sands, T., Glichrist, H., and Keramidas, V.G., Appl. Phys. Lett., 63, 27 (1993)Google Scholar
[15] Kim, K.Y., Hwang, H.I., Lee, J.Y., and Choo, W.K., Mat. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 197 (1992)Google Scholar
[16] Ghonge, S.G., Goo, E., Ramesh, R., Sands, T. and Keramidas, V.G., Appl. Phys. Lett., 63, 1628 (1993)Google Scholar
[17] Twai, P., Zheleva, T., and Narajayan, J., Appl. Phys. Lett., 63, 30 (1993)Google Scholar
[18] Lin, C.H., Yen, B.M., Kuo, H.C., Chen, H., Wu, T.B., and Stillman, G.E., J. Mater. Res., 15, 115 (2000)Google Scholar
[19] Lee, K.S., Kang, Y.M., and Baik, S., J. Mater Res, 14, 132 (1999)Google Scholar
[20] Roytburd, A.L. and Yu, Y., Ferroelectrics, 144, 137 (1993)Google Scholar
[21] Alpay, S.P. and Roytburd, A.L., Mat. Res. Soc. Symp. Proc. 474 Pittsburgh, PA, 407 (1997)Google Scholar
[22] Romanov, A.E., Pompe, W., and Speck, J.S., J. Appl. Phys., 79, 4037 (1996)Google Scholar
[23] Speck, J.S., Seifert, A., Pompe, W., and Ramesh, R., J. Appl. Phys, 76, 466 (1994)Google Scholar
[24] Pertsev, N.A. and Zembilgotov, A.G., J. Appl. Phys., 80, 6401 (1996)Google Scholar
[25] Pellet, C., Thin Solid Films, 175, 23 (1989)Google Scholar
[26] Bardal, A., Matthee, Th., Wecker, J., and Samwer, K., J. Appl. Phys. 75, 2902 (1994)Google Scholar
[27] Hirai, T., Teramoto, K., Koike, H., Nagashima, K., and Tarui, Y., Jpn. J. Appl. Phys. 36, 5253 (1997)Google Scholar
[28] Horita, S., Watanabe, M., and Masuda, A., Mater. Sci. Eng‥ B54, 79 (1998)Google Scholar
[29] Matthee, T., Wecker, J., Behner, H., Friedl, g., Eibl, O., and Samwer, K., Appl. Phys. Lett., 61, 1240 (1992)Google Scholar
[30] Baadal, A., Mzwerger, , Eibl, O., Wecker, J., and Metthee, T., Appl. Phys. Lett., 61, 1243 (1992)Google Scholar
[31] Bardal, A., Eibl, O., Matthee, T., Friedl, G., and Wecker, J., J. Mater. Res., 8, 2112 (1993)Google Scholar
[32] Kang, Y.M. and Baik, S., J. Appl. Phys., 82, 2532 (1997)Google Scholar
[33] Kwak, B.S., Eibl, A., Budai, J.D., Chrisholm, M.F., Boatner, L.A., and Wilkens, B.J., Phys. Rev., B49, 14865 (1994)Google Scholar
[34] Elemkin, V.V., Smotrakov, V. G., and Fesenko, E.G., Ferroelectrics, 110 137, (1990)Google Scholar
[35] Keijeser, M., Leeuw, D.M., Veldhoven, P.J., De Veirmean, A.E.M., Neerinck, D.G., and Dormans, G.J.M., Thin Solid Films, 266, 157 (1995)Google Scholar
[36] Stemer, S., Streiffer, S.K., Hsu, W-Y., Ernst, F., Raj, R., and Ruhle, M., J. Mater. Res, 10, 791 (1995)Google Scholar
[37] Foeth, M., Sfera, A., Stadelmann, P. and Buffat, P.-A., Journal of Electron Microscope, 48, 717 (1999)Google Scholar
[38] Huan, M.J., Furman, E., Jang, S.J. and Cross, L.E., Ferroelectrics, 99, 63 (1989)Google Scholar
[39] Ramesh, R., Extended abstract of IUMRS-ICEM2002, 636 (2002)Google Scholar