Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T17:06:44.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Homoepitaxial growth on 4H-SiC Substrates by Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Christer Hallin ,
Igor Khlebnikov ,
Yuri Khlebnikov ,
Peter Muzykov ,
Elif Berkman ,
Monica Sharma ,
George Stratiy ,
Murat Silan ,
Cem Basceri  and
Cengiz Balkas
Christer Hallin
Affiliation:
[email protected], Intrinsic Semiconductor, Epitaxy, 22660 Executive Drive #101, Dulles, Virginia, 20166, United States
Igor Khlebnikov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Yuri Khlebnikov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Peter Muzykov
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Elif Berkman
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Monica Sharma
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
George Stratiy
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Murat Silan
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Cem Basceri
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Cengiz Balkas
Affiliation:
[email protected], Intrinsic Semiconductor, Dulles, Virginia, 20166, United States
Get access

Abstract

Low dislocation density and even micropipe free substrates open up a great opportunity to produce high quality epitaxial layers. The epi-layer will become more sensitive to the epitaxial process itself and less dependent on varying substrate quality. Results presented here indicate a strong dependence of the epitaxial layers' growth mode and surface roughness on the substrates' dislocations and domain structure. Thick epitaxial layers grown on near on-axis wafers, both C-face and Si-face, show very similar growth behaviors as for physical vapor transport (PVT) grown crystals. The mix between step-flow and dislocation driven growth on near on-axis C-face chemical vapor deposition (CVD) grown epi-layers (30 μm thick) is resulting in a as smooth, and measured surface roughness is as low, as for growth on 8o off-axis substrates.

Surface roughness, Ra, measured on a 50 μm thick epitaxial layer, grown on a low EPD (1E+4 cm-2) 8o off-axis micropipe free substrate, was as low as 1.0 nm (2.98x2.32 mm area).

Keywords

chemical vapor deposition (CVD) (deposition)epitaxydislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-05
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S., and Takatori, K., Nature, Vol. 430, 1009 (2004).Google Scholar
2 Basceri, C., Khlebnikov, I., Khlebnikov, Y., Muzykov, P., Sharma, M., Straity, G., Silan, M., and Balkas, C., presented at ICSCRM 2005, Pittsburg, USA, (in press).Google Scholar
3 Powell, A., Leonard, R., Brady, M., Muller, St., Tsvetkov, V., Trussell, R., Sumakeris, J., Hobgood, H., Burk, A., Glass, R., and Carter, C., Mater. Sci. Forum Vol. 457–460, 41 (2003).Google Scholar
4 Ellison, A., Magnusson, B., Son, N.T., Storasta, L., and Janzen, E., Mater. Sci. Forum Vol. 433–436, 33 (2003).Google Scholar
5 Kimoto, T., Ph.D. Thesis, Faculty of Engineering, Kyoto University (1995).Google Scholar
6 Hallin, C., Wahab, Q., Ivanov, I., Bergman, P., and Janzen, E., Mater. Sci. Forum Vol. 457–460, 193 (2003).Google Scholar