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Hollow core dislocations in Mg-doped AlGaN

Published online by Cambridge University Press:  11 February 2011

D. Cherns ,
Y. Q. Wang ,
R. Liu ,
F. A. Ponce ,
H. Amano  and
I. Akasaki
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
Y. Q. Wang
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
R. Liu
Affiliation:
Dept of Physics, Arizona State University, Tempe, AZ 85287–1504, USA
F. A. Ponce
Affiliation:
Dept of Physics, Arizona State University, Tempe, AZ 85287–1504, USA
H. Amano
Affiliation:
Dept of Mat. Sci and Eng, Meijo University, Nagoya 468–8502, Japan
I. Akasaki
Affiliation:
Dept of Mat. Sci and Eng, Meijo University, Nagoya 468–8502, Japan
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Abstract

Transmission electron microscopy has been used to investigate the core structure of threading dislocations in heavily Mg-doped (1020 cm−3) Al0.03Ga0.97N films grown on (0001) sapphire by metal-organic chemical vapour deposition. Evidence is presented that Mg segregates to edge and mixed dislocations, and that these dislocations often have open cores with diameters in the range 1–5nm. The mechanism of hollow core formation and the role of Mg are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L10.9
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

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