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Hole or Electron Doped C60 Polymer Using Free Electron Laser Irradiation

Published online by Cambridge University Press:  23 March 2011

Nobuyuki Iwata ,
Daiki Koide ,
Syouta Katou ,
Eri Ikeda  and
Hiroshi Yamamoto
Nobuyuki Iwata
Affiliation:
CST, Nihon Univ., 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan
Daiki Koide
Affiliation:
CST, Nihon Univ., 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan
Syouta Katou
Affiliation:
CST, Nihon Univ., 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan
Eri Ikeda
Affiliation:
CST, Nihon Univ., 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan
Hiroshi Yamamoto
Affiliation:
CST, Nihon Univ., 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan
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Abstract

Polymerized C60 crystals were grown using the free electron laser (FEL) irradiation. In order to promote the polymerization degree, hole or electron was doped in the C60 crystals grown by the liquid-liquid interfacial precipitation (LLIP) method to eliminate the degradation by oxidation. The specimen grown with the I2 dissolved butylalcohol (BTA, CH3(CH2)3OH) and the C60 saturation o-xylene solution, subsequently pressed at 7GPa, showed only Ag(2)-derived mode at 1456 cm-1 after the FEL irradiation. The specimen belonged to so-called F phase, which is not obtained by the typical photo-induced polymerization process. It was noted that the FEL irradiation for polymerization of C60 was quite useful.

Keywords

polymerRaman spectroscopylaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1284: Symposium C – Fundamentals of Low-Dimensional Carbon Nanomaterials , 2011 , mrsf10-1284-c03-11
Copyright
Copyright © Materials Research Society 2011

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References

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