Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T05:28:03.842Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

Published online by Cambridge University Press:  01 February 2011

Isaho Kamata ,
Hidekazu Tsuchida ,
William M Vetter  and
Michael Dudley
Isaho Kamata
Affiliation:
[email protected], CRIEPI (Central Research Institute of Electric Power Industry), Materials Science Research Laboratory, 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan, +81-46-856-2121, +81-46-856-5571
Hidekazu Tsuchida
Affiliation:
[email protected], CRIEPI (Central Research Institute of Electric Power Industry), Materials Science Research Laboratory, 2-6-1 Nagasaka, Yokosuka, Kanagawa, 240-0196, Japan
William M Vetter
Affiliation:
[email protected], State University of New York, Department of Materials Science and Engineering, Stony Brook, New york, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected] , State University of New York, Department of Materials Science and Engineering, Stony Brook, New york, 11794-2275, United States
Get access

Abstract

Silicon carbide (SiC) substrates and epilayers contain many crystal defects, such as micropipes, screw dislocations, threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults. To investigate these defects, synchrotron radiation topography is frequently carried out. When the monochromatic synchrotron X-ray topography is taken by the grazing-incidence reflection geometry using 11-28 reflection, screw dislocations, TEDs and BPDs are simultaneously seen and shown as different topographic images [1]. Many studies of dislocations were reported using 11-28 reflections in 4H-SiC [1,2]. Topographic images of the dislocations have been analyzed by the ray-tracing method of computer simulation [3]. However, experimental images of dislocations were not fully matched to the fine structure of simulation images, because of a lack of resolution in recording media: conventional films and nuclear emulsion plates [3]. This time, we report obtaining high-resolution topographic images using a new recording medium, and compare results between the experiment and the computer simulation. Synchrotron topography in 11-28 reflection was carried out at SPring8 applying holography films as high-resolution recording media. The TED images are distinguished as four types, which have ribbon-like features with different rotating angles, through the use of the films. The four different TED images agree well with the computer simulated images which have been reported by Vetter et.al. taking into account of the different Burgers vector directions [3]. By comparing the three topographic images taken at g=-12-18, 11-28 and 2-1-18, we confirmed experimentally that the four types of TED images originated from the difference of Burgers vector directions. We also investigated high-resolution topographic images of elementary screw dislocations, micropipes, and BPDs in 4H-SiC epilayers. The experimental image of screw dislocation fairly matched with simulated image. The fine features in the experimental topographic images of micropipes and BPDs are also compared with the simulated images in detail. [1] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai: J. cryst. Growth. Vol. 260 (2004) 209. [2] H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, R. Ishii, K. Nakayama and Y.Sugawara: Jpn. J. Appl. Phys. Vol. 25, (2005), L806-808. [3] W. Vetter, H. Tsuchida, I. Kamata, M. Dudley: J. Appl. Cryst. Vol. 38, (2005), 442-447.

Keywords

dislocationsx-ray tomographydefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-11
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Sugawara, Y.: ISPSD2003 (2003) 10 Google Scholar
2 Neudeck, P. G. and Powell, J. A.: IEEE Electron Device Lett. 15 (1994) 63.Google Scholar
3 Bergman, J. P., Lendenmann, H., Nilsson, P.A. Lindefelt, U., and Skytt, P.: Mater. Sci. Forum 353–356, (2001) 299 Google Scholar
4 Jenny, J. R., Malta, D. P., Calus, M. R., Muller, St. G., Powell, A. R., Tsvetkov, V. F., Hobgood, H. McD., Glass, R. C. and Carter, C. H. Jr,: Matter. Sci. Forum 457 (2004) 35.Google Scholar
5 Kamata, I., Tsuchida, H., Jikimoto, T. and Izumi, K.: Jpn. J. Appl. Phys., 39 (2000) pp. 6496–6500 Google Scholar
6 Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamoto, A., Kondo, H., Onda, S. and Takatori, K.: Nature, 430 (2004) 1009.Google Scholar
7 Ohno, T., Yamaguchi, H., Kuroda, S., Kojima, K., Suzuki, T., Arai, K.: J. cryst. Growth. Vol. 260 (2004), p. 209.Google Scholar
8 Vetter, W., Tsuchida, H., Kamata, I. and Dudley, M.: J. Appl. Cryst. Vol. 38 (2005), p. 442 Google Scholar
9 Tsuchida, H., Kamata, I., Jikimoto, T., and Izumi, K.: J. Cryst. Growth Vol. 237–239 (2002), p. 1206 Google Scholar
10 Dudley, M., Huang, X. R., Huang, W., Powell, A., Wang, S., Neudeck, P. and Skowronski, M.: Appl. Phy. Lett. 75 (1999) 784 Google Scholar